JPS5752174A - Multigate field effect transistor - Google Patents
Multigate field effect transistorInfo
- Publication number
- JPS5752174A JPS5752174A JP12825880A JP12825880A JPS5752174A JP S5752174 A JPS5752174 A JP S5752174A JP 12825880 A JP12825880 A JP 12825880A JP 12825880 A JP12825880 A JP 12825880A JP S5752174 A JPS5752174 A JP S5752174A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- thickness
- layer
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- -1 e.g. Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the nutual conductance of a multigate field effect transistor having a plurality of gate electrodes on a compound semiconductor layer by reducing the thickness of a semiconductor layer positioned directly under the gate at least one. CONSTITUTION:An N type epitaxial active layer 43 having 1.10<17>cm<-3> of carrier density and approx. 0.3mum of thickness is formed through a buffer layer 42 on a semi-insulating GaAs semiconductor substrate 41 added with Cr. Then, regions 44, 45 are etched on the layer 43 to form stepwise difference, Schottky metal, e.g., aluminum is deposited in the thickness of approx. 5,000Angstrom , is then patterned, and the first and second gates 46, 47 of approx. 1.0mum of gate length are formed. When the thickness of the layer 43 directly under the first gate 46 is formed thinner than that directly under the second gate 47, a bigate field effect transistor having high mutual conductance even if positive bias is not applied to the gate can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12825880A JPS5752174A (en) | 1980-09-16 | 1980-09-16 | Multigate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12825880A JPS5752174A (en) | 1980-09-16 | 1980-09-16 | Multigate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5752174A true JPS5752174A (en) | 1982-03-27 |
Family
ID=14980397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12825880A Pending JPS5752174A (en) | 1980-09-16 | 1980-09-16 | Multigate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752174A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
EP0585942A1 (en) * | 1992-09-03 | 1994-03-09 | Sumitomo Electric Industries, Ltd. | Dual gate MESFET |
US5449932A (en) * | 1993-05-26 | 1995-09-12 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having gate and source regions in recesses |
EP0735593A1 (en) * | 1995-03-30 | 1996-10-02 | Murata Manufacturing Co., Ltd. | MESFET with recessed gate and method for producing same |
US5602501A (en) * | 1992-09-03 | 1997-02-11 | Sumitomo Electric Industries, Ltd. | Mixer circuit using a dual gate field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036081A (en) * | 1973-08-03 | 1975-04-04 | ||
JPS54148385A (en) * | 1978-05-12 | 1979-11-20 | Nec Corp | High-speed switching field effect transistor |
-
1980
- 1980-09-16 JP JP12825880A patent/JPS5752174A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036081A (en) * | 1973-08-03 | 1975-04-04 | ||
JPS54148385A (en) * | 1978-05-12 | 1979-11-20 | Nec Corp | High-speed switching field effect transistor |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
EP0585942A1 (en) * | 1992-09-03 | 1994-03-09 | Sumitomo Electric Industries, Ltd. | Dual gate MESFET |
US5389807A (en) * | 1992-09-03 | 1995-02-14 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
US5602501A (en) * | 1992-09-03 | 1997-02-11 | Sumitomo Electric Industries, Ltd. | Mixer circuit using a dual gate field effect transistor |
US5449932A (en) * | 1993-05-26 | 1995-09-12 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having gate and source regions in recesses |
EP0735593A1 (en) * | 1995-03-30 | 1996-10-02 | Murata Manufacturing Co., Ltd. | MESFET with recessed gate and method for producing same |
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