JPS5739584A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5739584A
JPS5739584A JP11447980A JP11447980A JPS5739584A JP S5739584 A JPS5739584 A JP S5739584A JP 11447980 A JP11447980 A JP 11447980A JP 11447980 A JP11447980 A JP 11447980A JP S5739584 A JPS5739584 A JP S5739584A
Authority
JP
Japan
Prior art keywords
gaas layer
type gaas
semi
type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11447980A
Other languages
Japanese (ja)
Inventor
Hideki Hayashi
Yukihiro Sasaya
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP11447980A priority Critical patent/JPS5739584A/en
Publication of JPS5739584A publication Critical patent/JPS5739584A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

PURPOSE:To decrease the source resistance of an MESFET by forming a striped projection on a semi-insulating substrate. CONSTITUTION:An N type GaAs layer 11 is epitaxially grown on a semi-insulating GaAs substrate 10, a striped projection 16 is so formed as to become mesa type in the section, and an N<+> type GaAs layer 12 is then epitaxially grown. Then, the N<+> type GaAs layer 12 and N type GaAs layer 11 are etched to form a gate electrode 13 for forming an aluminum Schottky barrier, an AuGeNi source electrode 14 and a drain electrode 15.
JP11447980A 1980-08-20 1980-08-20 Semiconductor device and manufacture thereof Pending JPS5739584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11447980A JPS5739584A (en) 1980-08-20 1980-08-20 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11447980A JPS5739584A (en) 1980-08-20 1980-08-20 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5739584A true JPS5739584A (en) 1982-03-04

Family

ID=14638764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11447980A Pending JPS5739584A (en) 1980-08-20 1980-08-20 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5739584A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293076A (en) * 1991-04-16 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Vehicle control apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146209A (en) * 1976-05-31 1977-12-05 Hitachi Ltd Formation of epitaxial layer
JPS5322378A (en) * 1976-08-13 1978-03-01 Fujitsu Ltd Production of field effect transistor s
JPS5366163A (en) * 1976-11-26 1978-06-13 Hitachi Ltd Selective growth method of semiconductor buried layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146209A (en) * 1976-05-31 1977-12-05 Hitachi Ltd Formation of epitaxial layer
JPS5322378A (en) * 1976-08-13 1978-03-01 Fujitsu Ltd Production of field effect transistor s
JPS5366163A (en) * 1976-11-26 1978-06-13 Hitachi Ltd Selective growth method of semiconductor buried layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293076A (en) * 1991-04-16 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Vehicle control apparatus

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