JPS5739580A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5739580A JPS5739580A JP11448080A JP11448080A JPS5739580A JP S5739580 A JPS5739580 A JP S5739580A JP 11448080 A JP11448080 A JP 11448080A JP 11448080 A JP11448080 A JP 11448080A JP S5739580 A JPS5739580 A JP S5739580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- grown
- etched
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the boundary state an operating layer in an inversion type MOSFET by employing an epitaxially grown semiconductor layer containing high impurity as source and drain regions and flattening the surface of the element. CONSTITUTION:A P<-> type GaAs epitaxial layer 17 is grown on a semi-insulating GaAs substrate 16, the layer 17 and the substrate 16 are then etched to form a striped projection 23 of trapezoidal section and an operating layer formed thereon, and an N<+> type GaAs epitaxial layer 18 is then grown. Subsequently, the layers 18 and 17 are etched, and an insulating film 19 is formed on the surface. The film 19 is partly removed to form source and drain electrodes 20, 21 and a gate electrode 22 is so formed as to cover the region contacted with the film 19 of the layer 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11448080A JPS5739580A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11448080A JPS5739580A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5739580A true JPS5739580A (en) | 1982-03-04 |
| JPS6333303B2 JPS6333303B2 (en) | 1988-07-05 |
Family
ID=14638790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11448080A Granted JPS5739580A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5739580A (en) |
-
1980
- 1980-08-20 JP JP11448080A patent/JPS5739580A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6333303B2 (en) | 1988-07-05 |
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