JPS6423571A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS6423571A JPS6423571A JP17904587A JP17904587A JPS6423571A JP S6423571 A JPS6423571 A JP S6423571A JP 17904587 A JP17904587 A JP 17904587A JP 17904587 A JP17904587 A JP 17904587A JP S6423571 A JPS6423571 A JP S6423571A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aln
- substrate
- gate insulation
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a III-V compound semiconductor element with high reliability for a long period, by forming an aluminum nitride film with its surface and its side being oxidized on a III-V compound semiconductor substrate. CONSTITUTION:After an n<+> source region 2 and an n<+> drain region 3 of an ohmic contact layer is made to epitaxially grow on a surface of a p-type InP substrate 1, an aluminum nitride (AlN) film 4 is formed as an gate insulation film. Heat treatment is performed in an arsine atmosphere ahead of the piling of AlN, in order to remove a natural oxide film on the substrate surface. Next the AlN film 4 is etched and patterned to form the gate insulation film, and an oxide layer 5 is formed on a surface and a side of the AlN film 4. A photoresist is finally used as a mask to form a source electrode 6, a drain electrode 7, and a gate electrode 8, and this element is provided with heat treatment in hydrogen. A voltage is applied to the element to perform bias temperature processing(BT processing). Water can be hence prevented from osmosing in the vicinity of an interface between the gate insulation film and the substrate. Accordingly a MISFET operation can be stabilized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17904587A JPS6423571A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17904587A JPS6423571A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6423571A true JPS6423571A (en) | 1989-01-26 |
Family
ID=16059159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17904587A Pending JPS6423571A (en) | 1987-07-20 | 1987-07-20 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6423571A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183597A (en) * | 2003-12-18 | 2005-07-07 | Nec Corp | Nitride semiconductor misfet |
US7385265B2 (en) | 2001-09-12 | 2008-06-10 | Nec Corporation | High dielectric constant MOSFET device |
-
1987
- 1987-07-20 JP JP17904587A patent/JPS6423571A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7385265B2 (en) | 2001-09-12 | 2008-06-10 | Nec Corporation | High dielectric constant MOSFET device |
JP2005183597A (en) * | 2003-12-18 | 2005-07-07 | Nec Corp | Nitride semiconductor misfet |
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