JPS6423571A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS6423571A
JPS6423571A JP17904587A JP17904587A JPS6423571A JP S6423571 A JPS6423571 A JP S6423571A JP 17904587 A JP17904587 A JP 17904587A JP 17904587 A JP17904587 A JP 17904587A JP S6423571 A JPS6423571 A JP S6423571A
Authority
JP
Japan
Prior art keywords
film
aln
substrate
gate insulation
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17904587A
Other languages
Japanese (ja)
Inventor
Asako Jitsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17904587A priority Critical patent/JPS6423571A/en
Publication of JPS6423571A publication Critical patent/JPS6423571A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a III-V compound semiconductor element with high reliability for a long period, by forming an aluminum nitride film with its surface and its side being oxidized on a III-V compound semiconductor substrate. CONSTITUTION:After an n<+> source region 2 and an n<+> drain region 3 of an ohmic contact layer is made to epitaxially grow on a surface of a p-type InP substrate 1, an aluminum nitride (AlN) film 4 is formed as an gate insulation film. Heat treatment is performed in an arsine atmosphere ahead of the piling of AlN, in order to remove a natural oxide film on the substrate surface. Next the AlN film 4 is etched and patterned to form the gate insulation film, and an oxide layer 5 is formed on a surface and a side of the AlN film 4. A photoresist is finally used as a mask to form a source electrode 6, a drain electrode 7, and a gate electrode 8, and this element is provided with heat treatment in hydrogen. A voltage is applied to the element to perform bias temperature processing(BT processing). Water can be hence prevented from osmosing in the vicinity of an interface between the gate insulation film and the substrate. Accordingly a MISFET operation can be stabilized.
JP17904587A 1987-07-20 1987-07-20 Semiconductor element Pending JPS6423571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17904587A JPS6423571A (en) 1987-07-20 1987-07-20 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17904587A JPS6423571A (en) 1987-07-20 1987-07-20 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS6423571A true JPS6423571A (en) 1989-01-26

Family

ID=16059159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17904587A Pending JPS6423571A (en) 1987-07-20 1987-07-20 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS6423571A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183597A (en) * 2003-12-18 2005-07-07 Nec Corp Nitride semiconductor misfet
US7385265B2 (en) 2001-09-12 2008-06-10 Nec Corporation High dielectric constant MOSFET device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385265B2 (en) 2001-09-12 2008-06-10 Nec Corporation High dielectric constant MOSFET device
JP2005183597A (en) * 2003-12-18 2005-07-07 Nec Corp Nitride semiconductor misfet

Similar Documents

Publication Publication Date Title
Bassous et al. Topology of silicon structures with recessed SiO2
US5614739A (en) HIGFET and method
JPS57176772A (en) Semiconductor device and manufacture thereof
JPS56104488A (en) Semiconductor laser element
JPS6410644A (en) Manufacture of semiconductor device
GB1428713A (en) Method of manufactruing a semiconductor device
US5693544A (en) N-type higfet and method
JPS54158880A (en) Compound semiconductor device and its manufacture
JPS6423571A (en) Semiconductor element
JPS57112079A (en) Field-effect semiconductor device
JPS54126483A (en) Schottky barrier gate field effect transistor and its production
EP0773579A2 (en) Semiconductor device with improved insulating/passivating layer
JPS5676571A (en) Mos field effect transistor and manufacture thereof
JPS54146974A (en) Production of schottky field effect transistor
JPS54162461A (en) Manufacture for semiconductor device
KR870006644A (en) Electrode Formation Method of III-V Group Compound Semiconductor Device
KR900001397B1 (en) Gas tetero junction field elfect transistor
JPS5739579A (en) Mos semiconductor device and manufacture thereof
GB1377678A (en) Method of formation of an insulating film on a compownd semiconductor surface using electric discharge
JPS6476775A (en) Manufacture of junction type field-effect transistor
KR880009445A (en) Manufacturing Method of Semiconductor Device
Umebachi et al. A New Heterojunction-Gate GaAs FET
JPS6461019A (en) Manufacture of compound semiconductor device
JPS6482676A (en) Iii-v compound semiconductor field-effect transistor and manufacture thereof
JPS54162457A (en) Electrode forming method for semiconductor element