JPS57112079A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS57112079A
JPS57112079A JP18730480A JP18730480A JPS57112079A JP S57112079 A JPS57112079 A JP S57112079A JP 18730480 A JP18730480 A JP 18730480A JP 18730480 A JP18730480 A JP 18730480A JP S57112079 A JPS57112079 A JP S57112079A
Authority
JP
Japan
Prior art keywords
layer
fet
insulating
region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18730480A
Other languages
Japanese (ja)
Inventor
Yasuo Nemoto
Satoru Shibata
Masumi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18730480A priority Critical patent/JPS57112079A/en
Publication of JPS57112079A publication Critical patent/JPS57112079A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect an active layer and keep the charactaristic stable by a method wherein a surface of a n-type active layer between a gate electrode and a source-driain electrode of a GaAs Schottky gate type FET is covered by a GaAlAs layer which is thick enough to be insulating. CONSTITUTION:Liquid phase epitaxial growth of a n-type active layer 12 and, for instance, a Ga0.7Al0.3As layer 17 which the thickness large enough (approximately 1,000Angstrom ) to make the layer 17 practically insulating is made on a semi- insulating GaAs substrate 11 with a buffer layer in between. Then after an element region is determined by mesa etching, electrodes 14, 15 of, for instance An-Ge are formed and after thermal processing an alloy layer 16 is formed. Or after an impurity is injected into a source-drain region electrodes 14, 15 are formed. Then the layer 17 of the gate region is removed and an Al gate electrode 13 is formed and a FET is composed. With above method, a passivation composition which does not produce boundary level or something like that in the active region, so that a FET in which the drift of the characteristics hardly occurs and which has low noise level can be obtained.
JP18730480A 1980-12-29 1980-12-29 Field-effect semiconductor device Pending JPS57112079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18730480A JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18730480A JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112079A true JPS57112079A (en) 1982-07-12

Family

ID=16203651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18730480A Pending JPS57112079A (en) 1980-12-29 1980-12-29 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112079A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998559A (en) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd Field effect transistor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd Semiconductor device
JPS6037784A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPS60261985A (en) * 1984-06-08 1985-12-25 Shipbuild Res Assoc Japan Free piston pump for pressure sending slurry and its air bleeding device
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
JPH02185042A (en) * 1989-01-11 1990-07-19 Nec Corp Field-effect transistor and manufacture thereof
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0642174A1 (en) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET with low ohmic resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503786A (en) * 1973-05-16 1975-01-16
JPS5122375A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaas shotsutokishohekidaioodono seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503786A (en) * 1973-05-16 1975-01-16
JPS5122375A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaas shotsutokishohekidaioodono seizohoho

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998559A (en) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd Field effect transistor
JPS59172728A (en) * 1983-03-22 1984-09-29 Fujitsu Ltd Semiconductor device
JPS6037784A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPS60261985A (en) * 1984-06-08 1985-12-25 Shipbuild Res Assoc Japan Free piston pump for pressure sending slurry and its air bleeding device
JPH0243916B2 (en) * 1984-06-08 1990-10-02 Nippon Zosen Kenkyu Kyokai
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
JPH02185042A (en) * 1989-01-11 1990-07-19 Nec Corp Field-effect transistor and manufacture thereof
US5159414A (en) * 1989-10-30 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Junction field effect transistor of a compound semiconductor
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0642174A1 (en) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET with low ohmic resistance

Similar Documents

Publication Publication Date Title
JPS57112079A (en) Field-effect semiconductor device
JPS5646562A (en) Semiconductor device
GB1215539A (en) Hybrid junction semiconductor device and method of making the same
FR2454703A1 (en) Fabrication process for microwave FET - has substrate of high resistivity compound with gate regions on one side and source and drain regions on other
JPS57128070A (en) Field-effect transistor
JPS57208174A (en) Semiconductor device
JPS56155531A (en) Manufacture of semiconductor device
JPS574169A (en) Gaas field-effect transistor
JPS57130476A (en) Semiconductor device
JPS57198661A (en) Semiconductor device
JPS5752174A (en) Multigate field effect transistor
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
JPS55105376A (en) Manufacture process of semiconductor device
JPS6439074A (en) Compound semiconductor device
JPS6439071A (en) Compound semiconductor device
JPS6439072A (en) Compound semiconductor device
JPS6423571A (en) Semiconductor element
JPS5739584A (en) Semiconductor device and manufacture thereof
JPS6461066A (en) Field-effect transistor
JPS6439073A (en) Compound semiconductor device
JPS641277A (en) Manufacture of semiconductor device
JPS5561073A (en) Semiconductor device
JPS5559779A (en) Schottky field effect transistor
JPS57114284A (en) Field effect transistor
JPS6422070A (en) Semiconductor device