JPS57112079A - Field-effect semiconductor device - Google Patents
Field-effect semiconductor deviceInfo
- Publication number
- JPS57112079A JPS57112079A JP18730480A JP18730480A JPS57112079A JP S57112079 A JPS57112079 A JP S57112079A JP 18730480 A JP18730480 A JP 18730480A JP 18730480 A JP18730480 A JP 18730480A JP S57112079 A JPS57112079 A JP S57112079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- fet
- insulating
- region
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To protect an active layer and keep the charactaristic stable by a method wherein a surface of a n-type active layer between a gate electrode and a source-driain electrode of a GaAs Schottky gate type FET is covered by a GaAlAs layer which is thick enough to be insulating. CONSTITUTION:Liquid phase epitaxial growth of a n-type active layer 12 and, for instance, a Ga0.7Al0.3As layer 17 which the thickness large enough (approximately 1,000Angstrom ) to make the layer 17 practically insulating is made on a semi- insulating GaAs substrate 11 with a buffer layer in between. Then after an element region is determined by mesa etching, electrodes 14, 15 of, for instance An-Ge are formed and after thermal processing an alloy layer 16 is formed. Or after an impurity is injected into a source-drain region electrodes 14, 15 are formed. Then the layer 17 of the gate region is removed and an Al gate electrode 13 is formed and a FET is composed. With above method, a passivation composition which does not produce boundary level or something like that in the active region, so that a FET in which the drift of the characteristics hardly occurs and which has low noise level can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18730480A JPS57112079A (en) | 1980-12-29 | 1980-12-29 | Field-effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18730480A JPS57112079A (en) | 1980-12-29 | 1980-12-29 | Field-effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57112079A true JPS57112079A (en) | 1982-07-12 |
Family
ID=16203651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18730480A Pending JPS57112079A (en) | 1980-12-29 | 1980-12-29 | Field-effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57112079A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998559A (en) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | Field effect transistor |
JPS59172728A (en) * | 1983-03-22 | 1984-09-29 | Fujitsu Ltd | Semiconductor device |
JPS6037784A (en) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | Field effect transistor |
JPS60261985A (en) * | 1984-06-08 | 1985-12-25 | Shipbuild Res Assoc Japan | Free piston pump for pressure sending slurry and its air bleeding device |
US4888626A (en) * | 1985-03-07 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned gaas fet with low 1/f noise |
JPH02185042A (en) * | 1989-01-11 | 1990-07-19 | Nec Corp | Field-effect transistor and manufacture thereof |
US5159414A (en) * | 1989-10-30 | 1992-10-27 | Mitsubishi Denki Kabushiki Kaisha | Junction field effect transistor of a compound semiconductor |
US5242846A (en) * | 1989-10-30 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a junction field effect transistor |
EP0642174A1 (en) * | 1993-08-03 | 1995-03-08 | Sumitomo Electric Industries, Ltd. | MESFET with low ohmic resistance |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503786A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS5122375A (en) * | 1974-08-19 | 1976-02-23 | Matsushita Electric Ind Co Ltd | Gaas shotsutokishohekidaioodono seizohoho |
-
1980
- 1980-12-29 JP JP18730480A patent/JPS57112079A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503786A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS5122375A (en) * | 1974-08-19 | 1976-02-23 | Matsushita Electric Ind Co Ltd | Gaas shotsutokishohekidaioodono seizohoho |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998559A (en) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | Field effect transistor |
JPS59172728A (en) * | 1983-03-22 | 1984-09-29 | Fujitsu Ltd | Semiconductor device |
JPS6037784A (en) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | Field effect transistor |
JPS60261985A (en) * | 1984-06-08 | 1985-12-25 | Shipbuild Res Assoc Japan | Free piston pump for pressure sending slurry and its air bleeding device |
JPH0243916B2 (en) * | 1984-06-08 | 1990-10-02 | Nippon Zosen Kenkyu Kyokai | |
US4888626A (en) * | 1985-03-07 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned gaas fet with low 1/f noise |
JPH02185042A (en) * | 1989-01-11 | 1990-07-19 | Nec Corp | Field-effect transistor and manufacture thereof |
US5159414A (en) * | 1989-10-30 | 1992-10-27 | Mitsubishi Denki Kabushiki Kaisha | Junction field effect transistor of a compound semiconductor |
US5242846A (en) * | 1989-10-30 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a junction field effect transistor |
EP0642174A1 (en) * | 1993-08-03 | 1995-03-08 | Sumitomo Electric Industries, Ltd. | MESFET with low ohmic resistance |
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