JPS5561073A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5561073A JPS5561073A JP13413178A JP13413178A JPS5561073A JP S5561073 A JPS5561073 A JP S5561073A JP 13413178 A JP13413178 A JP 13413178A JP 13413178 A JP13413178 A JP 13413178A JP S5561073 A JPS5561073 A JP S5561073A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- gaas
- film
- layer
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve high-frequency characteristics and increase gate voltage resistance, by making the carrier concentration of an active layer of FET using GaAs above the degeneration concentration, that is, making the concentration high so that no Schottky barrier is formed.
CONSTITUTION: GaAs high resistance buffer epitaxial layer 2 is grown on semi-insulating substrate 1. On the top of this is grown GaAs active layer 3, 6×1017atoms/ /cm3, whose carrie concentration is made at least above the degeneration concentration. Next, SiO2 film is provided only on the channel region. Using this as mask, the source and drain regions of layer 3 are etched and removed. Subsequently, n+- type GaAs layer, about 3×1018/cm3 in concentration, is grown here, and thereby source and drain electrode contact regions 5, 6 are formed. Then, Au.Ge alloy electrodes 7, 8 are fitted here, film 11 is removed and the entire surface is fitted with SiO2 film. Subsequently, a window is opened, gate oxide film 4 is fitted and gate electrode 9 is provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13413178A JPS5561073A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13413178A JPS5561073A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5561073A true JPS5561073A (en) | 1980-05-08 |
Family
ID=15121182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13413178A Pending JPS5561073A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5561073A (en) |
-
1978
- 1978-10-31 JP JP13413178A patent/JPS5561073A/en active Pending
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