JPS55117281A - 3[5 group compound semiconductor hetero structure mosfet - Google Patents

3[5 group compound semiconductor hetero structure mosfet

Info

Publication number
JPS55117281A
JPS55117281A JP2457279A JP2457279A JPS55117281A JP S55117281 A JPS55117281 A JP S55117281A JP 2457279 A JP2457279 A JP 2457279A JP 2457279 A JP2457279 A JP 2457279A JP S55117281 A JPS55117281 A JP S55117281A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
forbidden band
group compound
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2457279A
Other languages
Japanese (ja)
Other versions
JPS6321353B2 (en
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2457279A priority Critical patent/JPS55117281A/en
Publication of JPS55117281A publication Critical patent/JPS55117281A/en
Publication of JPS6321353B2 publication Critical patent/JPS6321353B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To accelerate the operation of a III-V group compound semiconductor hetero structure MOSFET and lower the threshold voltage of the MOSFET by separating a semiconductor layer making contact with a gate oxide film from a channel layer by employing III-V compound semiconductor having superior hetero junction such as lattice matching or the like. CONSTITUTION:A p-type In1-xGaxAsyP1-y 8 and a p-type InP 9 are laminated on a p-type InP substrate 7 in such a manner that the layer 8 is lattice matched with the layers 7 and 9 as much as possible and the forbidden band width Eg2 of the layer 8 is smaller than those of the forbidden band width Eg1 of the layers 7, 9 to become Eg1-Eg2>0.2eV. The thickness of the layer 9 is set at 0.1mum. Then, n-type source 10 and drain 11 are diffused in the layer 7 to form electrodes 14, 15 thereon. Thereafter, the gate film 12 of Al2O3 is formed on the layer 9 to form an aluminum electrode 13 thereon. Since the inner layer is thus formed in channel, the mobility is not lowered to accelerate the operation without stable boundary surface properties. Since the forbidden band is narrow, it can lower the threshold voltage thereof.
JP2457279A 1979-03-05 1979-03-05 3[5 group compound semiconductor hetero structure mosfet Granted JPS55117281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2457279A JPS55117281A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor hetero structure mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2457279A JPS55117281A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor hetero structure mosfet

Publications (2)

Publication Number Publication Date
JPS55117281A true JPS55117281A (en) 1980-09-09
JPS6321353B2 JPS6321353B2 (en) 1988-05-06

Family

ID=12141873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2457279A Granted JPS55117281A (en) 1979-03-05 1979-03-05 3[5 group compound semiconductor hetero structure mosfet

Country Status (1)

Country Link
JP (1) JPS55117281A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599971A (en) * 1982-07-08 1984-01-19 Matsushita Electric Ind Co Ltd Insulated gate field effect transistor
JPS6012775A (en) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol Field effect transistor
US4556895A (en) * 1982-04-28 1985-12-03 Nec Corporation Field-effect transistor having a channel region of a Group III-V compound semiconductor and a Group IV semiconductor
JPS6127681A (en) * 1984-07-17 1986-02-07 Res Dev Corp Of Japan Field effect transistor having channel part of superlattice construction
JPS63284858A (en) * 1987-05-15 1988-11-22 Seiko Instr & Electronics Ltd Insulated-gate field-effect transistor
JPH03288482A (en) * 1990-04-04 1991-12-18 Asahi Chem Ind Co Ltd Highly reliable and highly sensitive inas hall element
WO2008039369A2 (en) * 2006-09-25 2008-04-03 Lucent Technologies Inc. Field-effect heterostructure transistors
JP2011082332A (en) * 2009-10-07 2011-04-21 National Chiao Tung Univ Structure of high electron mobility transistor, device including structure of the same, and method of manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556895A (en) * 1982-04-28 1985-12-03 Nec Corporation Field-effect transistor having a channel region of a Group III-V compound semiconductor and a Group IV semiconductor
JPS599971A (en) * 1982-07-08 1984-01-19 Matsushita Electric Ind Co Ltd Insulated gate field effect transistor
JPS6012775A (en) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol Field effect transistor
JPS6127681A (en) * 1984-07-17 1986-02-07 Res Dev Corp Of Japan Field effect transistor having channel part of superlattice construction
JPH0224025B2 (en) * 1984-07-17 1990-05-28 Shingijutsu Kaihatsu Jigyodan
JPS63284858A (en) * 1987-05-15 1988-11-22 Seiko Instr & Electronics Ltd Insulated-gate field-effect transistor
JPH03288482A (en) * 1990-04-04 1991-12-18 Asahi Chem Ind Co Ltd Highly reliable and highly sensitive inas hall element
WO2008039369A2 (en) * 2006-09-25 2008-04-03 Lucent Technologies Inc. Field-effect heterostructure transistors
WO2008039369A3 (en) * 2006-09-25 2008-05-29 Lucent Technologies Inc Field-effect heterostructure transistors
US7781801B2 (en) 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
JP2011082332A (en) * 2009-10-07 2011-04-21 National Chiao Tung Univ Structure of high electron mobility transistor, device including structure of the same, and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6321353B2 (en) 1988-05-06

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