JPS5793579A - Compound semiconductor device - Google Patents
Compound semiconductor deviceInfo
- Publication number
- JPS5793579A JPS5793579A JP16949880A JP16949880A JPS5793579A JP S5793579 A JPS5793579 A JP S5793579A JP 16949880 A JP16949880 A JP 16949880A JP 16949880 A JP16949880 A JP 16949880A JP S5793579 A JPS5793579 A JP S5793579A
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction
- type
- contacted
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To protect a gate electrode from high electric impact by providing means for drawing the extension of the gate electrode of a Shottky type field effect transistor using GaAs onto a P-N junction region not contacted with a Schottky junction. CONSTITUTION:In a field effect transistor having an N type source region 2, drain region 3 and a channel region 4 formed on a GaAs semi-insulating substrate 1, a P type region 8 contacted with the region 2 but not contacted with the region 4 is formed, and the other extension region of the gate electrode 7 forming a Schottky junction with the region 4 is drawn onto a P type region 8. The electron density of the region 2 is formed higher than the channel region 4, and the reverse withstand voltage of the P-N junction of the P type region 8 and the source region 2 can become lower than the Schottky junction, and the P-N junction breaks down the high reverse voltage, thereby protecting the Schottky junction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16949880A JPS5793579A (en) | 1980-12-03 | 1980-12-03 | Compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16949880A JPS5793579A (en) | 1980-12-03 | 1980-12-03 | Compound semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5793579A true JPS5793579A (en) | 1982-06-10 |
JPS6314508B2 JPS6314508B2 (en) | 1988-03-31 |
Family
ID=15887630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16949880A Granted JPS5793579A (en) | 1980-12-03 | 1980-12-03 | Compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5793579A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57130476A (en) * | 1981-02-05 | 1982-08-12 | Sony Corp | Semiconductor device |
JPS62145876A (en) * | 1985-12-20 | 1987-06-29 | Sanyo Electric Co Ltd | Protecting diode for compound semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0329121U (en) * | 1989-08-01 | 1991-03-22 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5348487A (en) * | 1976-10-14 | 1978-05-01 | Fujitsu Ltd | Semiconductor device |
-
1980
- 1980-12-03 JP JP16949880A patent/JPS5793579A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5348487A (en) * | 1976-10-14 | 1978-05-01 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57130476A (en) * | 1981-02-05 | 1982-08-12 | Sony Corp | Semiconductor device |
JPS62145876A (en) * | 1985-12-20 | 1987-06-29 | Sanyo Electric Co Ltd | Protecting diode for compound semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6314508B2 (en) | 1988-03-31 |
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