JPS5348487A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5348487A
JPS5348487A JP12353776A JP12353776A JPS5348487A JP S5348487 A JPS5348487 A JP S5348487A JP 12353776 A JP12353776 A JP 12353776A JP 12353776 A JP12353776 A JP 12353776A JP S5348487 A JPS5348487 A JP S5348487A
Authority
JP
Japan
Prior art keywords
mis
semiconductor device
breakdown voltage
band
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12353776A
Other languages
Japanese (ja)
Inventor
Masumi Fukuda
Katsuhiko Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12353776A priority Critical patent/JPS5348487A/en
Publication of JPS5348487A publication Critical patent/JPS5348487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To stabilize breakdown characteristics and further widen the band in a high frequency band by inserting a MIS capacity element built therein with a constant voltage PN junction diode having a reverse breakdown voltage lower than the breakdown voltage of gate to the input side of a Schottky barrier type or MIS type FET.
JP12353776A 1976-10-14 1976-10-14 Semiconductor device Pending JPS5348487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12353776A JPS5348487A (en) 1976-10-14 1976-10-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12353776A JPS5348487A (en) 1976-10-14 1976-10-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5348487A true JPS5348487A (en) 1978-05-01

Family

ID=14863047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12353776A Pending JPS5348487A (en) 1976-10-14 1976-10-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5348487A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132967U (en) * 1979-03-10 1980-09-20
JPS56140667A (en) * 1980-04-04 1981-11-04 Nec Corp Semiconductor device
JPS5737883A (en) * 1980-08-20 1982-03-02 Toshiba Corp Compound semiconductor device
JPS5737882A (en) * 1980-08-20 1982-03-02 Toshiba Corp Compound semiconductor device and production thereof
JPS5793579A (en) * 1980-12-03 1982-06-10 Toshiba Corp Compound semiconductor device
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS57202784A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
JPS5851577A (en) * 1981-09-22 1983-03-26 Matsushita Electric Ind Co Ltd Semiconductor device
JPS60257174A (en) * 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JP2009239844A (en) * 2008-03-28 2009-10-15 Sanyo Electric Co Ltd Noise filter and amplifier circuit with built-in noise filter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857578A (en) * 1971-10-26 1973-08-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857578A (en) * 1971-10-26 1973-08-13

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211018Y2 (en) * 1979-03-10 1987-03-16
JPS55132967U (en) * 1979-03-10 1980-09-20
JPS56140667A (en) * 1980-04-04 1981-11-04 Nec Corp Semiconductor device
JPS5737883A (en) * 1980-08-20 1982-03-02 Toshiba Corp Compound semiconductor device
JPS5737882A (en) * 1980-08-20 1982-03-02 Toshiba Corp Compound semiconductor device and production thereof
JPS6314507B2 (en) * 1980-08-20 1988-03-31 Tokyo Shibaura Electric Co
JPS5793579A (en) * 1980-12-03 1982-06-10 Toshiba Corp Compound semiconductor device
JPS6314508B2 (en) * 1980-12-03 1988-03-31 Tokyo Shibaura Electric Co
EP0071648A1 (en) * 1981-02-05 1983-02-16 Sony Corporation Semiconductor device
WO1982002799A1 (en) * 1981-02-05 1982-08-19 Takakuwa Hidemi Semiconductor device
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS57202784A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
JPH031827B2 (en) * 1981-06-08 1991-01-11 Tokyo Shibaura Electric Co
JPS5851577A (en) * 1981-09-22 1983-03-26 Matsushita Electric Ind Co Ltd Semiconductor device
JPS60257174A (en) * 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JP2009239844A (en) * 2008-03-28 2009-10-15 Sanyo Electric Co Ltd Noise filter and amplifier circuit with built-in noise filter

Similar Documents

Publication Publication Date Title
ES476907A1 (en) Semiconductor device
JPS5374385A (en) Manufacture of field effect semiconductor device
JPS5348487A (en) Semiconductor device
GB1518984A (en) Integrated circuit
ES364658A1 (en) High speed switching rectifier
ES398775A1 (en) Schottky barrier transit time negative resistance diode circuits
JPS538572A (en) Field effect type transistor
JPS5382179A (en) Field effect transistor
JPS5376678A (en) Semiconductor device
FR2356276A1 (en) Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77)
JPS5376676A (en) High breakdown voltage field effect power transistor
GB1276791A (en) Semiconductor device
GB1232837A (en)
GB1434652A (en) Semiconductor devices
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
GB1215557A (en) A semiconductor photosensitive device
JPS5377476A (en) Semiconductor integrated circuit device
JPS5546555A (en) Semiconductor device
JPS6451664A (en) Semiconductor device
JPS5596672A (en) Semiconductor device
GB915688A (en) Improvements in semiconductor devices
JPS52137271A (en) Semiconductor device
JPS5379474A (en) Manufacture of semiconductor device
JPS5772388A (en) Junction type field-effect semiconductor device and its manufacdure
JPS5793579A (en) Compound semiconductor device