JPS6451664A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6451664A
JPS6451664A JP20953687A JP20953687A JPS6451664A JP S6451664 A JPS6451664 A JP S6451664A JP 20953687 A JP20953687 A JP 20953687A JP 20953687 A JP20953687 A JP 20953687A JP S6451664 A JPS6451664 A JP S6451664A
Authority
JP
Japan
Prior art keywords
schottky
series
field effect
film
schottky diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20953687A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakatani
Kazuo Yamanaka
Shuichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20953687A priority Critical patent/JPS6451664A/en
Publication of JPS6451664A publication Critical patent/JPS6451664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To offer a vertical type field effect transistor provided with a protecting element to prevent the fluctuation of transistor characteristics, by arranging, between a gate and a source, Schottky diodes connected in series with inverse direction to each other. CONSTITUTION:Between a gate electrode G and a source electrode S, two Schottky diodes SD1, SD2 connected in series with inverse direction to each other are provided. The one Schottky diode is formed by the contact of a Pt film 15a and P-type region 5, and the other Schottky diode is formed by the contact of a Pt film 15b and the P-type region 5. Since a protecting element is formed by using Schottky diodes in this manner, minority carrier does not generate even if the SD1 is broken down by a voltage higher than the Schottky junction breakdown voltage and the SD2 turns ON. Therefore the stabilization of a vertical type field effect transistor characteristics is enabled.
JP20953687A 1987-08-24 1987-08-24 Semiconductor device Pending JPS6451664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20953687A JPS6451664A (en) 1987-08-24 1987-08-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20953687A JPS6451664A (en) 1987-08-24 1987-08-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6451664A true JPS6451664A (en) 1989-02-27

Family

ID=16574427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20953687A Pending JPS6451664A (en) 1987-08-24 1987-08-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6451664A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0741412A2 (en) * 1995-05-02 1996-11-06 Motorola, Inc. Semiconductor device having high voltage protection capability
US6441463B2 (en) 2000-06-29 2002-08-27 Mitsubishi Denki Kabushiki Kaisha IGBT, control circuit, and protection circuit on same substrate
JP2011040590A (en) * 2009-08-12 2011-02-24 Sanken Electric Co Ltd Semiconductor device
JP2011199141A (en) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd Semiconductor device
WO2019116868A1 (en) * 2017-12-11 2019-06-20 ローム株式会社 Semiconductor rectifier

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0741412A2 (en) * 1995-05-02 1996-11-06 Motorola, Inc. Semiconductor device having high voltage protection capability
EP0741412A3 (en) * 1995-05-02 1997-07-16 Motorola Inc Semiconductor device having high voltage protection capability
US6441463B2 (en) 2000-06-29 2002-08-27 Mitsubishi Denki Kabushiki Kaisha IGBT, control circuit, and protection circuit on same substrate
JP2011040590A (en) * 2009-08-12 2011-02-24 Sanken Electric Co Ltd Semiconductor device
JP2011199141A (en) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd Semiconductor device
WO2019116868A1 (en) * 2017-12-11 2019-06-20 ローム株式会社 Semiconductor rectifier
JPWO2019116868A1 (en) * 2017-12-11 2020-12-24 ローム株式会社 Semiconductor rectifier
US11476247B2 (en) 2017-12-11 2022-10-18 Rohm Co., Ltd. Semiconductor rectifier

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