KR910013587A - Semiconductor Device with Avalanche Yield Junction - Google Patents

Semiconductor Device with Avalanche Yield Junction Download PDF

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Publication number
KR910013587A
KR910013587A KR1019890019078A KR890019078A KR910013587A KR 910013587 A KR910013587 A KR 910013587A KR 1019890019078 A KR1019890019078 A KR 1019890019078A KR 890019078 A KR890019078 A KR 890019078A KR 910013587 A KR910013587 A KR 910013587A
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South Korea
Prior art keywords
semiconductor region
semiconductor
region
conductivity type
adjacent
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KR1019890019078A
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Korean (ko)
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KR920010676B1 (en
Inventor
아키오 키요무라
타까요시 테라시마
토오루 스즈키
Original Assignee
고타니 고우이찌
산켄 덴끼 가부시끼가이샤
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Publication of KR910013587A publication Critical patent/KR910013587A/en
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Publication of KR920010676B1 publication Critical patent/KR920010676B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

내용 없음.No content.

Description

애벌란취 항복형 접합을 갖는 반도체 장치Semiconductor Device with Avalanche Yield Junction

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 제1의 실시예의 애벌란취 다이오드를 제2도의 I-I 선에 대응해서 보여주는 단면도,1 is a cross-sectional view showing the avalanche diode of the first embodiment of the present invention corresponding to line I-I of FIG.

제2도는 제1도의 반도체 기체의 표면을 보여주는 평면도,2 is a plan view showing the surface of the semiconductor substrate of FIG.

제3도는 제1도의 애벌란취 다이오드의 N형 영역과 P+형영역과 N+형 영역과의 경계부분에서의 전계강도의 분포를 보여주는 도면.3 is a diagram showing the distribution of electric field strength at the boundary between an N-type region, a P + -type region, and an N + -type region of the avalanche diode of FIG.

Claims (2)

N형 또는 P형의 제1의 도전형을 갖는 제1의 반도체 영역(15 또는 32)와, 제1의 도전형과 반대 도전형의 제2의 도전형을 가지고 있으며, 제1의 반도체영역(15 또는 32)에 인접하고 있는, 제2의 반도체영역(17 또는 33)과, 제1의 도전형을 가지며, 제1의 반도체영역(15 또는 32)에 인접하고 있는 제3의 반도체영역(18 또는 36)과, 제2의 반도체영역(17 또는 33) 에 직접적으로 또는 별도의 반도체영역(16 또는 31 또는 26)을 통하여 전기적으로 접속된 제2의 주전극(14 또는 38)을 구비하고, 상기 제2의 반도체 기체의 표면에 각각 노출되고 있으며, 제3의 반도체영역(18 또는 36)은 제2의 반도체영역(17 또는 33)에 인접해서 포위되고, 반도체 기체의 표면에는 제2의 반도체영역(17 또는 33)과 제3의 반도체영역(18 또는 36)의 경제부분 윗쪽 및 제3의 반도체영역(18 또는 36)의 노출면 거의 전부를 포함하도록 절연막(12) 이 형성되어 있으며, 제1의 주전극(13 또는 40)은 절연막(12)을 통하여 제3의 반도체 영역(18 또는 36)의 상면 거의 전부에 뻗쳐있으며, 제2의 반도체 영역(17 또는 33)에 인접하는 부분에서의 제1의 반도체영역(l5 또는 32) 의 불순물 농도보다도 높은것을 특징으로 하는 애벌란취 항복형접합을 갖는 반도체장치.A first semiconductor region 15 or 32 having an N-type or P-type first conductivity type, and a second conductivity type opposite to the first conductivity type; Second semiconductor region 17 or 33 adjacent to 15 or 32 and third semiconductor region 18 having a first conductivity type and adjacent to first semiconductor region 15 or 32. Or 36 and a second main electrode 14 or 38 electrically connected directly to the second semiconductor region 17 or 33 or through a separate semiconductor region 16 or 31 or 26, The third semiconductor region 18 or 36 is respectively exposed to the surface of the second semiconductor substrate, and is surrounded by the second semiconductor region 17 or 33, and the second semiconductor is formed on the surface of the semiconductor substrate. Near the exposed portion of the third semiconductor region 18 or 36 above the economic portion of the region 17 or 33 and the third semiconductor region 18 or 36. An insulating film 12 is formed to include a portion, and the first main electrode 13 or 40 extends to almost all of the upper surface of the third semiconductor region 18 or 36 through the insulating film 12. A semiconductor device having an avalanche yielding junction characterized in that it is higher than an impurity concentration of the first semiconductor region (l5 or 32) in a portion adjacent to the semiconductor region (17 or 33). 제1항에 있어서, 제3의 반도체영역(18 또는 36)은 반도체기체의 표면을 기준으로한 제2의 반도체영역(17 또는 33)의 길이보다도 낮은 제1의 부분을 갖으며, 제1의 부분을 제2의 반도체영역(17 또는 33)에 인접하도록 배치되고, 제2의 부분은 평면적으로보아 제1의 부분에 포위되도록 배치되어 있는것을 특징으로 하는 반도체장치.3. The third semiconductor region 18 or 36 has a first portion which is lower than the length of the second semiconductor region 17 or 33 with respect to the surface of the semiconductor gas. And the portion is disposed adjacent to the second semiconductor region (17 or 33), and the second portion is disposed so as to be surrounded by the first portion in plan view. ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the original contents.
KR1019890019078A 1988-12-30 1989-12-21 Avalanche breakdown diode KR920010676B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63-333952 1988-12-30
JP33395288 1988-12-30
JP1-208900 1989-08-11
JP1208900A JPH02256279A (en) 1988-12-30 1989-08-11 Semiconductor device having avalanche breakdown type junction

Publications (2)

Publication Number Publication Date
KR910013587A true KR910013587A (en) 1991-08-08
KR920010676B1 KR920010676B1 (en) 1992-12-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019078A KR920010676B1 (en) 1988-12-30 1989-12-21 Avalanche breakdown diode

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JP (1) JPH02256279A (en)
KR (1) KR920010676B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778970A (en) * 1993-06-18 1995-03-20 Sanken Electric Co Ltd Semiconductor device
KR100483612B1 (en) * 2002-08-19 2005-04-19 삼성전기주식회사 Photo Diode for Optical Pick-Up
JP5168765B2 (en) * 2005-08-26 2013-03-27 富士電機株式会社 Manufacturing method of vertical Zener diode and vertical Zener diode

Also Published As

Publication number Publication date
KR920010676B1 (en) 1992-12-12
JPH02256279A (en) 1990-10-17
JPH0582072B2 (en) 1993-11-17

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