KR830009654A - Integrated circuit device protection circuit - Google Patents

Integrated circuit device protection circuit Download PDF

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Publication number
KR830009654A
KR830009654A KR1019820000403A KR820000403A KR830009654A KR 830009654 A KR830009654 A KR 830009654A KR 1019820000403 A KR1019820000403 A KR 1019820000403A KR 820000403 A KR820000403 A KR 820000403A KR 830009654 A KR830009654 A KR 830009654A
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South Korea
Prior art keywords
semiconductor
transistor
semiconductor layer
protection circuit
semiconductor region
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KR1019820000403A
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Korean (ko)
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KR860000714B1 (en
Inventor
로날드 애버리 레슬리
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글렌 에이취. 브루스틀
알씨에이 코오포레이숀
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Publication of KR830009654A publication Critical patent/KR830009654A/en
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Publication of KR860000714B1 publication Critical patent/KR860000714B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용 없음No content

Description

집적회로장치의 보호회로Integrated circuit device protection circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 보호회로를 구체적으로 표시하는 반도체 구조의 한 실시예의 횡단면도.1 is a cross-sectional view of one embodiment of a semiconductor structure specifically displaying a protection circuit of the present invention.

제2도는 제1도의 반도체 보호회로의 계통도.2 is a system diagram of the semiconductor protection circuit of FIG.

Claims (14)

기판과, 기판위에 배치된 첫번째 도전율형의 표면을 갖는 반도체층과, 두번째 도전율형으로 되어 있으며 반도체층과 PN접합을 형성한 첫번째와 두번째와 각각 분리된 반도체 영역과, 두번째 반도체 영역과 PN접합 상태로 배치된 첫번째 도전율형의 세번째 반도체 영역과, 세번째 반도체 영역을 전원단자에 연결하기 위한 도전장치와, 반도체층(12)에 배치되어 있으며 두번째와 네번째 반도체 영역(16,20)사이의 반도체에 저항요소가 형성되도록 두번째 반도체 영역(16)근처에 떨어져 있으며 도전장치(26)로서 전원단자에 연결된 네번째 반도체 영역(20), 등을 포함하는 반도체 보호회로.A semiconductor layer having a substrate, a semiconductor layer having a surface of a first conductivity type disposed on the substrate, a semiconductor region of a second conductivity type, separated from the first and second portions forming a PN junction with the semiconductor layer, and a second semiconductor region and a PN junction state, respectively. A third semiconductor region of the first conductivity type, a conductive device for connecting the third semiconductor region to the power supply terminal, and a semiconductor resistor 12 disposed in the semiconductor layer 12 and resisting the semiconductor between the second and fourth semiconductor regions 16 and 20. And a fourth semiconductor region (20) connected to a power supply terminal as a conductive device (26) and spaced near the second semiconductor region (16) so that an element is formed. 제2항에 있어서, 다섯번째 반도체 영역(11)이 반도체층(12)과 도전율형이 똑같으며 첫번째와 두번째반도체 영역(14,16)아래 그리고 반도체층(22)과 기판(10)사이에 배치되며 반도체층(12)의 고유저항보다 더 낮은 고유저항을 갖는것 등을 포함하는 반도체 보호회로.The semiconductor device of claim 2, wherein the fifth semiconductor region 11 has the same conductivity type as the semiconductor layer 12 and is disposed below the first and second semiconductor regions 14 and 16 and between the semiconductor layer 22 and the substrate 10. And a lower resistivity than the resistivity of the semiconductor layer 12. 제2항에 있어서, 결합패드(28)와, 결합패드(28)에 연결된 신호단자를 포함하는 실용회로와, 결합패드(28)를 첫번째 영역(14)에 연결하는 장치(24)등을 포함하는 반도체 보호회로.3. The apparatus of claim 2 comprising a coupling pad 28, a utility circuit comprising a signal terminal coupled to the coupling pad 28, an apparatus 24 for connecting the coupling pad 28 to the first region 14, and the like. Semiconductor protection circuit. 제3항에 있어서, 반도체층(12)을 둘러싸고 있으며 반도체층(12)의 표면에서 기판(10)으로 확장한 두번째 도전율형의 여섯번째 반도체 영역(32)을 포함하는 반도체 보호회로.4. The semiconductor protection circuit according to claim 3, comprising a sixth semiconductor region (32) of a second conductivity type that surrounds the semiconductor layer (12) and extends from the surface of the semiconductor layer (12) to the substrate (10). 제4항에 있어서, 기판(10)재로가 P형 도전율 실리콘인 반도체 보호회로.5. The semiconductor protective circuit according to claim 4, wherein the substrate (10) material is P-type conductivity silicon. 제5항에 있어서, 반도체층(12)이 N형 도전율의 에피텍셜층안 반도체 보호회로.6. The semiconductor protection circuit according to claim 5, wherein the semiconductor layer (12) is in an epitaxial layer of N type conductivity. 제6항에 있어서, 네번째 반도체 영역(20)을 완전히 감싸고 있으며 반도체층(12)의 표면으로부터 확장한 두번째 도전율형의 일곱번째 반도체영역(38)과, 일곱번째 반도체 영역(38)에 인접한 반도체층(12)의 표면으로부터 확장한 첫번째 도전율형의 여덟번째 반도체 영역(36)과 일곱번째와 여덟번째 반도체 영역(38,36)을 다이오드 형으로 연결된 트랜지스터(Q3)로 되도록 연결하기 위한 도전장치(34)등을 포함하는 반도체보호회로.7. The semiconductor device according to claim 6, wherein the seventh semiconductor region (38) of the second conductivity type which completely surrounds the fourth semiconductor region (20) and extends from the surface of the semiconductor layer (12), and the semiconductor layer adjacent to the seventh semiconductor region (38). A conductive device for connecting the eighth semiconductor region 36 of the first conductivity type and the seventh and eighth semiconductor regions 38,36 extending from the surface of (12) to be diode-connected transistors Q 3 ( 34) a semiconductor protection circuit comprising a lamp; 제6항에 있어서, 네번째 반도체 영역(20)이 반도체층(12)와 관련되어 형성된 PN접합에서 배치되며 두번째와, 네번째 반도체 영역(16,20)사이에서 배치된 반도체층(12)의 저항부분을 포함하는 저항을 형성하도록 두번째 반도체 영역(20)과 공간간격을 두도록 배치된 반도체 보호회로.7. The resistive portion of the semiconductor layer 12 according to claim 6, wherein the fourth semiconductor region 20 is disposed in a PN junction formed in association with the semiconductor layer 12 and is disposed between the second and fourth semiconductor regions 16,20. A semiconductor protection circuit disposed to be spaced apart from the second semiconductor region 20 to form a resistance comprising a. 반도체 재료체에서 형성된 방해도전율형의 에미터, 베이스, 콜렉터전극을 갖는 첫번째와 두번째트랜지스터와, 첫번째 트랜지스터의 베이스전극을 두번째 트랜지스터의 콜렉터전극에 연결하는 장치와 두번째 트랜지스터의 베이스 전극을 첫번째 전극에 연결하는 장치와 두번째 트랜지스터의 베이스 전극을 첫번째 트랜지스터의 콜렉터전극에 연결하는 장치를 포함하는 SCR과 마찬가지로 첫번째와 두번째 트랜지스터를 연결하는 장치와, 동적전원을 공급받기 위한 전원단자와, 전원단자를 첫번째 트랜지스터의 에미터 전극에 연결하는 장치와, 실용회로에 연결하기 위한 신호단자와, 두번째 트랜지스터의 에미터전극을 신호단자에 연결하기 위한 장치와, 두번째 트랜지스터(Q2)의 베이스전극(112)과 전원단자(30)사이에 연결된 저항소자, 등을 포함하는 보호회로.The first and second transistors having the disturbance conductivity type emitter, base, and collector electrodes formed from the semiconductor material, the device connecting the base electrode of the first transistor to the collector electrode of the second transistor, and the base electrode of the second transistor to the first electrode. A device for connecting the first and second transistors, a power supply terminal for receiving dynamic power, and a power supply terminal for the first transistor, similarly to an SCR including a device for connecting the base electrode of the second transistor to the collector electrode of the first transistor. A device for connecting to the emitter electrode, a signal terminal for connecting to the utility circuit, a device for connecting the emitter electrode of the second transistor to the signal terminal, the base electrode 112 and the power supply terminal of the second transistor Q 2 Including a resistance element connected between the 30, etc. Protection circuit. 제9항에 있어서, 저항소자가 선형동작장치(120)인 보호회로.10. The protection circuit according to claim 9, wherein the resistance element is a linear operating device (120). 제10항에 있어서, 선형동작 저항소자(120)가 두번째 트랜지스터(2)의 베이스 전극(112)과 첫번째 트랜지스터(Q1)의 에미터전극(118)사이에 위치한 반도체 재료체부분의 저항(R)인 보호회로.The method of claim 10, wherein the linear on-resistance element 120, an emitter electrode 118, the resistance of the semiconductor material body portion located between the base electrode 112 and the first transistor (Q 1) of the second transistor (2) (R Protection circuit. 제9항에 있어서, 저항소자가 비선형 동작장치인 보호회로.A protective circuit according to claim 9, wherein the resistance element is a nonlinear operation device. 제12항에 있어서, 비선형 저항소자가 두번째 트랜지스터(Q2)의 베이스 전극과 첫번째 저항(Q1)의 에미터전극(118)사이에 위치한 반도체(12)부분에서 형성된 다이오드 형태로된 보호회로.13. The protection circuit according to claim 12, wherein the nonlinear resistance element is formed in the form of a diode (12) located between the base electrode of the second transistor (Q 2 ) and the emitter electrode (118) of the first resistor (Q 1 ). 제13항에 있어서 비선형 저항소자가 다이오드 형태로 연결된 트랜지스터(Q3)인 보호회로.The protection circuit according to claim 13, wherein the nonlinear resistance element is a transistor (Q 3 ) connected in the form of a diode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR8200403A 1981-01-30 1982-01-30 Protection circuit for integrated circuit devices KR860000714B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23035781A 1981-01-30 1981-01-30
US32621981A 1981-12-01 1981-12-01
US230357 1994-04-19
US326219 1999-06-04

Publications (2)

Publication Number Publication Date
KR830009654A true KR830009654A (en) 1983-12-22
KR860000714B1 KR860000714B1 (en) 1986-06-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR8200403A KR860000714B1 (en) 1981-01-30 1982-01-30 Protection circuit for integrated circuit devices

Country Status (8)

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KR (1) KR860000714B1 (en)
CA (1) CA1179406A (en)
DE (1) DE3201933C2 (en)
ES (2) ES8307416A1 (en)
FI (1) FI74166C (en)
FR (1) FR2499325B1 (en)
GB (2) GB2092377B (en)
IT (1) IT1151504B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (en) * 1982-09-14 1984-03-21 Toshiba Corp Semiconductor protective device
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
KR900008746B1 (en) * 1986-11-19 1990-11-29 삼성전자 주식회사 Semiconductor device protecting a connection
DE3835569A1 (en) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Protective arrangement
DE4004526C1 (en) * 1990-02-14 1991-09-05 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5224169A (en) * 1991-05-13 1993-06-29 Thomson Consumer Electronics, Inc. Protection arrangement for an audio output channel
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
DE1901075A1 (en) * 1969-01-10 1970-08-13 Bosch Gmbh Robert Two-pole electrical switching element
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection

Also Published As

Publication number Publication date
ES508976A0 (en) 1983-06-16
ES520411A0 (en) 1984-03-01
IT1151504B (en) 1986-12-24
GB2141301B (en) 1985-07-24
CA1179406A (en) 1984-12-11
GB2092377B (en) 1985-07-31
FR2499325A1 (en) 1982-08-06
FI74166B (en) 1987-08-31
DE3201933C2 (en) 1987-01-08
IT8219185A0 (en) 1982-01-19
ES8307416A1 (en) 1983-06-16
FI74166C (en) 1987-12-10
FR2499325B1 (en) 1985-07-26
ES8403245A1 (en) 1984-03-01
DE3201933A1 (en) 1982-08-12
GB8413887D0 (en) 1984-07-04
FI820197L (en) 1982-07-31
GB2092377A (en) 1982-08-11
KR860000714B1 (en) 1986-06-07
GB2141301A (en) 1984-12-12

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