ES8307416A1 - Protection circuit for integrated circuit devices - Google Patents
Protection circuit for integrated circuit devicesInfo
- Publication number
- ES8307416A1 ES8307416A1 ES508976A ES508976A ES8307416A1 ES 8307416 A1 ES8307416 A1 ES 8307416A1 ES 508976 A ES508976 A ES 508976A ES 508976 A ES508976 A ES 508976A ES 8307416 A1 ES8307416 A1 ES 8307416A1
- Authority
- ES
- Spain
- Prior art keywords
- terminal
- protection circuit
- circuit
- resistive element
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001052 transient effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
A protection circuit which may be used in a television receiver to protect an integrated circuit from damage due to high-voltage transients comprises a PNPN structure (14, 12, 16, 18,) forming a silicon controlled rectifier (SCR) and an associated resistive element (R). The resistive element may be a linear resistor or a non-linear resistive element in the form of a diode-connected transistor. Terminal (28) of the protection circuit is connected to an input or output terminal of the protected circuit, and the other terminal (30) is connected to the most positive power supply potential. Transient voltages at the integrated circuit terminal (28) greater than one forward biased PN junction voltage drop above the positive power supply potential (V+) cause the protection circuit to conduct current, thereby dissipating the energy of the high-voltage transient.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23035781A | 1981-01-30 | 1981-01-30 | |
US32621981A | 1981-12-01 | 1981-12-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES508976A0 ES508976A0 (en) | 1983-06-16 |
ES8307416A1 true ES8307416A1 (en) | 1983-06-16 |
Family
ID=26924154
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES508976A Expired ES8307416A1 (en) | 1981-01-30 | 1982-01-22 | Protection circuit for integrated circuit devices |
ES520411A Granted ES520411A0 (en) | 1981-01-30 | 1983-03-08 | IMPROVEMENTS INTRODUCED IN A CIRCUIT OF PROTECTION BASED ON SEMICONDUCTORS. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES520411A Granted ES520411A0 (en) | 1981-01-30 | 1983-03-08 | IMPROVEMENTS INTRODUCED IN A CIRCUIT OF PROTECTION BASED ON SEMICONDUCTORS. |
Country Status (8)
Country | Link |
---|---|
KR (1) | KR860000714B1 (en) |
CA (1) | CA1179406A (en) |
DE (1) | DE3201933A1 (en) |
ES (2) | ES8307416A1 (en) |
FI (1) | FI74166C (en) |
FR (1) | FR2499325B1 (en) |
GB (2) | GB2092377B (en) |
IT (1) | IT1151504B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948951A (en) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | Semiconductor protective device |
US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
US4562454A (en) * | 1983-12-29 | 1985-12-31 | Motorola, Inc. | Electronic fuse for semiconductor devices |
KR900008746B1 (en) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | Semiconductor device protecting a connection |
DE3835569A1 (en) * | 1988-10-19 | 1990-05-03 | Telefunken Electronic Gmbh | Protective arrangement |
DE4004526C1 (en) * | 1990-02-14 | 1991-09-05 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
US5224169A (en) * | 1991-05-13 | 1993-06-29 | Thomson Consumer Electronics, Inc. | Protection arrangement for an audio output channel |
US5235489A (en) * | 1991-06-28 | 1993-08-10 | Sgs-Thomson Microelectronics, Inc. | Integrated solution to high voltage load dump conditions |
USD794465S1 (en) | 2015-08-28 | 2017-08-15 | The Procter & Gamble Company | Container |
USD793867S1 (en) | 2015-08-28 | 2017-08-08 | The Procter & Gamble Company | Container |
USD793250S1 (en) | 2015-09-07 | 2017-08-01 | The Procter & Gamble Company | Container |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
DE1901075A1 (en) * | 1969-01-10 | 1970-08-13 | Bosch Gmbh Robert | Two-pole electrical switching element |
JPS55113358A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
GB2056808A (en) * | 1979-08-17 | 1981-03-18 | Lumenition Ltd | Power transistor protection |
-
1982
- 1982-01-19 IT IT19185/82A patent/IT1151504B/en active
- 1982-01-19 GB GB8201501A patent/GB2092377B/en not_active Expired
- 1982-01-22 DE DE19823201933 patent/DE3201933A1/en active Granted
- 1982-01-22 FI FI820197A patent/FI74166C/en not_active IP Right Cessation
- 1982-01-22 ES ES508976A patent/ES8307416A1/en not_active Expired
- 1982-01-29 CA CA000395261A patent/CA1179406A/en not_active Expired
- 1982-01-29 FR FR828201502A patent/FR2499325B1/en not_active Expired
- 1982-01-30 KR KR8200403A patent/KR860000714B1/en not_active IP Right Cessation
-
1983
- 1983-03-08 ES ES520411A patent/ES520411A0/en active Granted
-
1984
- 1984-05-31 GB GB08413887A patent/GB2141301B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2499325A1 (en) | 1982-08-06 |
ES508976A0 (en) | 1983-06-16 |
GB2141301B (en) | 1985-07-24 |
ES8403245A1 (en) | 1984-03-01 |
KR860000714B1 (en) | 1986-06-07 |
GB2092377A (en) | 1982-08-11 |
GB2141301A (en) | 1984-12-12 |
CA1179406A (en) | 1984-12-11 |
KR830009654A (en) | 1983-12-22 |
FI74166C (en) | 1987-12-10 |
FI820197L (en) | 1982-07-31 |
GB8413887D0 (en) | 1984-07-04 |
ES520411A0 (en) | 1984-03-01 |
DE3201933C2 (en) | 1987-01-08 |
IT1151504B (en) | 1986-12-24 |
FR2499325B1 (en) | 1985-07-26 |
IT8219185A0 (en) | 1982-01-19 |
FI74166B (en) | 1987-08-31 |
GB2092377B (en) | 1985-07-31 |
DE3201933A1 (en) | 1982-08-12 |
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