GB915688A - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

Info

Publication number
GB915688A
GB915688A GB3399659A GB3399659A GB915688A GB 915688 A GB915688 A GB 915688A GB 3399659 A GB3399659 A GB 3399659A GB 3399659 A GB3399659 A GB 3399659A GB 915688 A GB915688 A GB 915688A
Authority
GB
United Kingdom
Prior art keywords
type
wafer
zone
zones
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3399659A
Inventor
Dennis Quintrell Fuller
George Roman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pye Electronic Products Ltd
Original Assignee
Pye Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pye Ltd filed Critical Pye Ltd
Priority to GB3399659A priority Critical patent/GB915688A/en
Publication of GB915688A publication Critical patent/GB915688A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

915,688. Semi-conductor devices. PYE Ltd. Sept. 28, 1960 [Oct. 7, 1959], No. 33996/59. Class 37. A two-terminal semi-conductor device comprises a wafer of one conductivity type with a series of spaced zones of opposite type extending into it such that the space charge zone around one PN junction can influence the next adjacent junction region, and over ohmic contacts to the zone at one end and to the wafer at the other. Fig. 1 shows an N-type silicon or germanium wafer 1 with P-type zones 2. When a reverse bias potential is applied between ohmic electrode 4 on one end P-type zone and ohmic electrode 3 on the wafer adjacent the opposite end P-type zone, the current increases in steps as the space charge region around each P-type zone reaches the adjacent junction whereupon the current suddenly increases. If A.C. is applied a staircase waveform results. The successive P-zones may lie on opposite sides of the wafer.
GB3399659A 1959-10-07 1959-10-07 Improvements in semiconductor devices Expired GB915688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3399659A GB915688A (en) 1959-10-07 1959-10-07 Improvements in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3399659A GB915688A (en) 1959-10-07 1959-10-07 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
GB915688A true GB915688A (en) 1963-01-16

Family

ID=10360052

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3399659A Expired GB915688A (en) 1959-10-07 1959-10-07 Improvements in semiconductor devices

Country Status (1)

Country Link
GB (1) GB915688A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335296A (en) * 1961-06-07 1967-08-08 Westinghouse Electric Corp Semiconductor devices capable of supporting large reverse voltages
US3360698A (en) * 1964-08-24 1967-12-26 Motorola Inc Direct current semiconductor divider
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335296A (en) * 1961-06-07 1967-08-08 Westinghouse Electric Corp Semiconductor devices capable of supporting large reverse voltages
US3360698A (en) * 1964-08-24 1967-12-26 Motorola Inc Direct current semiconductor divider
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Similar Documents

Publication Publication Date Title
GB992003A (en) Semiconductor devices
GB1002734A (en) Coupling transistor
GB721740A (en) Signal translating devices utilising semiconductive bodies
GB1359979A (en) Input transient protection for complementary insulated gate field effect transistor integrated circuit device
GB905426A (en) Improvements in or relating to semi-conductor devices
GB783647A (en) Improvements in or relating to barrier-layer systems
SE8403852L (en) Semiconductor overvoltage attenuators with a power output voltage that can be accurately predetermined
GB805207A (en) Electric circuit devices utilizing semiconductor bodies and circuits including such devices
GB871307A (en) Transistor with double collector
GB1251088A (en)
GB920630A (en) Improvements in the fabrication of semiconductor elements
GB1173919A (en) Semiconductor Device with a pn-Junction
GB971261A (en) Improvements in semiconductor devices
US3078196A (en) Semiconductive switch
GB849477A (en) Improvements in or relating to semiconductor control devices
GB994883A (en) Semiconductor diode
GB983266A (en) Semiconductor switching devices
GB954532A (en) Semi-conductor adjustable band pass filter
US3808476A (en) Charge pump photodetector
GB905398A (en) Improvements in or relating to semi-conductor devices
GB915688A (en) Improvements in semiconductor devices
US3210560A (en) Semiconductor device
GB995727A (en) Improvements in or relating to semiconductor devices
GB927214A (en) Improvements in semi-conductor devices
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors