JPS6461067A - Field-effect transistor and manufacture thereof - Google Patents
Field-effect transistor and manufacture thereofInfo
- Publication number
- JPS6461067A JPS6461067A JP21944887A JP21944887A JPS6461067A JP S6461067 A JPS6461067 A JP S6461067A JP 21944887 A JP21944887 A JP 21944887A JP 21944887 A JP21944887 A JP 21944887A JP S6461067 A JPS6461067 A JP S6461067A
- Authority
- JP
- Japan
- Prior art keywords
- impurity concentration
- gate
- photoresist film
- opened
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enhance the breakdown strengths of gate and drain electrodes and to increase an output current by forming a low impurity concentration region having a lower impurity concentration than that of a semiconductor layer in contact with the gate electrode between the gate electrode and the drain electrode. CONSTITUTION:A GaAs buffer layer 7, an n-type GaAs active layer 2a and a barrier layer 8 are sequentially deposited on a semi-insulating GaAs substrate 1a. Then, it is coated with a photoresist film 9, opened, Ga ions 10 are then implanted to form a low impurity concentration region 13, the film 9 is removed, coated again with a photoresist film 11, opened corresponding to source, drain electrode forming regions, and ohmic drain and source electrodes 14, 15 made of Au-Ge and Ni alloys are formed. Eventually, after the photoresist film is again formed, a gate is opened, aluminum is deposited, lifted OFF, and a gate electrode 16 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944887A JPS6461067A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944887A JPS6461067A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461067A true JPS6461067A (en) | 1989-03-08 |
Family
ID=16735572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21944887A Pending JPS6461067A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461067A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0499334A (en) * | 1990-08-18 | 1992-03-31 | Nec Corp | Field-effect transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5376675A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | High breakdown voltage field effect power transistor |
JPS59171169A (en) * | 1983-03-17 | 1984-09-27 | Nec Corp | Field effect transistor and manufacture thereof |
JPS62298182A (en) * | 1986-06-18 | 1987-12-25 | Hitachi Ltd | Semiconductor device |
JPS63219178A (en) * | 1987-03-09 | 1988-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect transistor |
-
1987
- 1987-09-01 JP JP21944887A patent/JPS6461067A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5376675A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | High breakdown voltage field effect power transistor |
JPS59171169A (en) * | 1983-03-17 | 1984-09-27 | Nec Corp | Field effect transistor and manufacture thereof |
JPS62298182A (en) * | 1986-06-18 | 1987-12-25 | Hitachi Ltd | Semiconductor device |
JPS63219178A (en) * | 1987-03-09 | 1988-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0499334A (en) * | 1990-08-18 | 1992-03-31 | Nec Corp | Field-effect transistor |
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