JPS6461067A - Field-effect transistor and manufacture thereof - Google Patents

Field-effect transistor and manufacture thereof

Info

Publication number
JPS6461067A
JPS6461067A JP21944887A JP21944887A JPS6461067A JP S6461067 A JPS6461067 A JP S6461067A JP 21944887 A JP21944887 A JP 21944887A JP 21944887 A JP21944887 A JP 21944887A JP S6461067 A JPS6461067 A JP S6461067A
Authority
JP
Japan
Prior art keywords
impurity concentration
gate
photoresist film
opened
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21944887A
Other languages
Japanese (ja)
Inventor
Hikari Toida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21944887A priority Critical patent/JPS6461067A/en
Publication of JPS6461067A publication Critical patent/JPS6461067A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enhance the breakdown strengths of gate and drain electrodes and to increase an output current by forming a low impurity concentration region having a lower impurity concentration than that of a semiconductor layer in contact with the gate electrode between the gate electrode and the drain electrode. CONSTITUTION:A GaAs buffer layer 7, an n-type GaAs active layer 2a and a barrier layer 8 are sequentially deposited on a semi-insulating GaAs substrate 1a. Then, it is coated with a photoresist film 9, opened, Ga ions 10 are then implanted to form a low impurity concentration region 13, the film 9 is removed, coated again with a photoresist film 11, opened corresponding to source, drain electrode forming regions, and ohmic drain and source electrodes 14, 15 made of Au-Ge and Ni alloys are formed. Eventually, after the photoresist film is again formed, a gate is opened, aluminum is deposited, lifted OFF, and a gate electrode 16 is formed.
JP21944887A 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof Pending JPS6461067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21944887A JPS6461067A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21944887A JPS6461067A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6461067A true JPS6461067A (en) 1989-03-08

Family

ID=16735572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21944887A Pending JPS6461067A (en) 1987-09-01 1987-09-01 Field-effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6461067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0499334A (en) * 1990-08-18 1992-03-31 Nec Corp Field-effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376675A (en) * 1976-12-17 1978-07-07 Nec Corp High breakdown voltage field effect power transistor
JPS59171169A (en) * 1983-03-17 1984-09-27 Nec Corp Field effect transistor and manufacture thereof
JPS62298182A (en) * 1986-06-18 1987-12-25 Hitachi Ltd Semiconductor device
JPS63219178A (en) * 1987-03-09 1988-09-12 Nippon Telegr & Teleph Corp <Ntt> Field-effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376675A (en) * 1976-12-17 1978-07-07 Nec Corp High breakdown voltage field effect power transistor
JPS59171169A (en) * 1983-03-17 1984-09-27 Nec Corp Field effect transistor and manufacture thereof
JPS62298182A (en) * 1986-06-18 1987-12-25 Hitachi Ltd Semiconductor device
JPS63219178A (en) * 1987-03-09 1988-09-12 Nippon Telegr & Teleph Corp <Ntt> Field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0499334A (en) * 1990-08-18 1992-03-31 Nec Corp Field-effect transistor

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