JPS5595371A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5595371A
JPS5595371A JP313079A JP313079A JPS5595371A JP S5595371 A JPS5595371 A JP S5595371A JP 313079 A JP313079 A JP 313079A JP 313079 A JP313079 A JP 313079A JP S5595371 A JPS5595371 A JP S5595371A
Authority
JP
Japan
Prior art keywords
layer
film
gate region
light
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP313079A
Other languages
Japanese (ja)
Inventor
Akio Shimano
Hiromitsu Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP313079A priority Critical patent/JPS5595371A/en
Priority to US06/047,931 priority patent/US4247373A/en
Priority to GB7921141A priority patent/GB2028370B/en
Priority to DE2924702A priority patent/DE2924702C2/en
Priority to FR7915720A priority patent/FR2429492A1/en
Priority to CA330,051A priority patent/CA1129120A/en
Publication of JPS5595371A publication Critical patent/JPS5595371A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a deep dug-in gate region and improve high frequency characteristics by anode-oxidizing only the gate region by selective irradiation of light and controlling the product of the thickness and concentration of the non-oxidezed layer below this, namely, the active layer of a Schottky FET by the amount of light irradiation only.
CONSTITUTION: An n-type GaAs layer 22 is epitaxially grown on semiinsulating GaAs substrate 21, and photo resist film 23 having an opening on the gate region is formed on top of this. Next, substrate 21 is made an anode and Pt electrode a cathode, and by using an electrolyte composed of tartaric acid, water and glycol, electricity is applied. At the same time, by irradiating a fixed amount of light on layer 22, oxide film 24 is produced only on the opened part of layer 22. Subsequently, only film 24 is removed by using a solution of 5% chloric acid, and gate metal 25 is fitted in the resultant depression, and then film 23 is removed. Finally, layer 22 on both sides of metal 25 is brought into ohmic contact with source and drain electrodes 26 by means of an Au-Ge alloy, and thereby a Schottky FET of recess structure is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP313079A 1978-06-20 1979-01-12 Manufacture of semiconductor device Pending JPS5595371A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP313079A JPS5595371A (en) 1979-01-12 1979-01-12 Manufacture of semiconductor device
US06/047,931 US4247373A (en) 1978-06-20 1979-06-12 Method of making semiconductor device
GB7921141A GB2028370B (en) 1978-06-20 1979-06-18 Method of making simeconductor device and apparatus therefor
DE2924702A DE2924702C2 (en) 1978-06-20 1979-06-19 Method and apparatus for manufacturing semiconductor devices
FR7915720A FR2429492A1 (en) 1978-06-20 1979-06-19 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTORS BY ANODIC OXIDATION
CA330,051A CA1129120A (en) 1978-06-20 1979-06-19 Method of making semiconductor device and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP313079A JPS5595371A (en) 1979-01-12 1979-01-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5595371A true JPS5595371A (en) 1980-07-19

Family

ID=11548767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP313079A Pending JPS5595371A (en) 1978-06-20 1979-01-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370770A (en) * 1976-12-07 1978-06-23 Nec Corp Production of schottky barrier gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370770A (en) * 1976-12-07 1978-06-23 Nec Corp Production of schottky barrier gate type field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
JPH047101B2 (en) * 1983-06-03 1992-02-07 Nippon Electric Co

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