JPS5370770A - Production of schottky barrier gate type field effect transistor - Google Patents

Production of schottky barrier gate type field effect transistor

Info

Publication number
JPS5370770A
JPS5370770A JP14731076A JP14731076A JPS5370770A JP S5370770 A JPS5370770 A JP S5370770A JP 14731076 A JP14731076 A JP 14731076A JP 14731076 A JP14731076 A JP 14731076A JP S5370770 A JPS5370770 A JP S5370770A
Authority
JP
Japan
Prior art keywords
gate type
schottky barrier
barrier gate
production
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14731076A
Other languages
Japanese (ja)
Inventor
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14731076A priority Critical patent/JPS5370770A/en
Publication of JPS5370770A publication Critical patent/JPS5370770A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To produce a Schottky barrier gate type FET having a sufficient gatedrain dielectric strength by etching the lateral direction under photo resist about 4 times the depth by using an anodic oxidation method in place of chemical etching.
COPYRIGHT: (C)1978,JPO&Japio
JP14731076A 1976-12-07 1976-12-07 Production of schottky barrier gate type field effect transistor Pending JPS5370770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14731076A JPS5370770A (en) 1976-12-07 1976-12-07 Production of schottky barrier gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14731076A JPS5370770A (en) 1976-12-07 1976-12-07 Production of schottky barrier gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5370770A true JPS5370770A (en) 1978-06-23

Family

ID=15427294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14731076A Pending JPS5370770A (en) 1976-12-07 1976-12-07 Production of schottky barrier gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5370770A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595371A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS55166968A (en) * 1979-06-15 1980-12-26 Fujitsu Ltd Schottky barrier type field effect transistor
JPS5612774A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Manufacturing method for semiconductor device
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
JPH01251620A (en) * 1988-03-30 1989-10-06 Nec Corp Manufacture of semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595371A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS55166968A (en) * 1979-06-15 1980-12-26 Fujitsu Ltd Schottky barrier type field effect transistor
JPS5612774A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Manufacturing method for semiconductor device
JPS6228592B2 (en) * 1979-07-11 1987-06-22 Fujitsu Ltd
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
JPH047101B2 (en) * 1983-06-03 1992-02-07 Nippon Electric Co
JPH01251620A (en) * 1988-03-30 1989-10-06 Nec Corp Manufacture of semiconductor device
JPH0450738B2 (en) * 1988-03-30 1992-08-17 Nippon Electric Co

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