JPS5370770A - Production of schottky barrier gate type field effect transistor - Google Patents
Production of schottky barrier gate type field effect transistorInfo
- Publication number
- JPS5370770A JPS5370770A JP14731076A JP14731076A JPS5370770A JP S5370770 A JPS5370770 A JP S5370770A JP 14731076 A JP14731076 A JP 14731076A JP 14731076 A JP14731076 A JP 14731076A JP S5370770 A JPS5370770 A JP S5370770A
- Authority
- JP
- Japan
- Prior art keywords
- gate type
- schottky barrier
- barrier gate
- production
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To produce a Schottky barrier gate type FET having a sufficient gatedrain dielectric strength by etching the lateral direction under photo resist about 4 times the depth by using an anodic oxidation method in place of chemical etching.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14731076A JPS5370770A (en) | 1976-12-07 | 1976-12-07 | Production of schottky barrier gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14731076A JPS5370770A (en) | 1976-12-07 | 1976-12-07 | Production of schottky barrier gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5370770A true JPS5370770A (en) | 1978-06-23 |
Family
ID=15427294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14731076A Pending JPS5370770A (en) | 1976-12-07 | 1976-12-07 | Production of schottky barrier gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5370770A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595371A (en) * | 1979-01-12 | 1980-07-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS55166968A (en) * | 1979-06-15 | 1980-12-26 | Fujitsu Ltd | Schottky barrier type field effect transistor |
JPS5612774A (en) * | 1979-07-11 | 1981-02-07 | Fujitsu Ltd | Manufacturing method for semiconductor device |
JPS59224176A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Manufacture of field effect transistor |
JPH01251620A (en) * | 1988-03-30 | 1989-10-06 | Nec Corp | Manufacture of semiconductor device |
-
1976
- 1976-12-07 JP JP14731076A patent/JPS5370770A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595371A (en) * | 1979-01-12 | 1980-07-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS55166968A (en) * | 1979-06-15 | 1980-12-26 | Fujitsu Ltd | Schottky barrier type field effect transistor |
JPS5612774A (en) * | 1979-07-11 | 1981-02-07 | Fujitsu Ltd | Manufacturing method for semiconductor device |
JPS6228592B2 (en) * | 1979-07-11 | 1987-06-22 | Fujitsu Ltd | |
JPS59224176A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Manufacture of field effect transistor |
JPH047101B2 (en) * | 1983-06-03 | 1992-02-07 | Nippon Electric Co | |
JPH01251620A (en) * | 1988-03-30 | 1989-10-06 | Nec Corp | Manufacture of semiconductor device |
JPH0450738B2 (en) * | 1988-03-30 | 1992-08-17 | Nippon Electric Co |
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