JPS5224465A - Schottky barrier semiconductor device - Google Patents

Schottky barrier semiconductor device

Info

Publication number
JPS5224465A
JPS5224465A JP10089675A JP10089675A JPS5224465A JP S5224465 A JPS5224465 A JP S5224465A JP 10089675 A JP10089675 A JP 10089675A JP 10089675 A JP10089675 A JP 10089675A JP S5224465 A JPS5224465 A JP S5224465A
Authority
JP
Japan
Prior art keywords
semiconductor device
schottky barrier
barrier semiconductor
regions
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10089675A
Other languages
Japanese (ja)
Other versions
JPS5935183B2 (en
Inventor
Seiichi Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANKEI DENKI KK
Sanken Electric Co Ltd
Original Assignee
SANKEI DENKI KK
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANKEI DENKI KK, Sanken Electric Co Ltd filed Critical SANKEI DENKI KK
Priority to JP10089675A priority Critical patent/JPS5935183B2/en
Publication of JPS5224465A publication Critical patent/JPS5224465A/en
Publication of JPS5935183B2 publication Critical patent/JPS5935183B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: In a semiconductor device having second regions formed inside No. 1 region on which a Schottky barrier is formed, inverse breakdown voltage is improved by making the distance between second regions a predetermined one.
COPYRIGHT: (C)1977,JPO&Japio
JP10089675A 1975-08-20 1975-08-20 Shock barrier semiconductor device Expired JPS5935183B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10089675A JPS5935183B2 (en) 1975-08-20 1975-08-20 Shock barrier semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10089675A JPS5935183B2 (en) 1975-08-20 1975-08-20 Shock barrier semiconductor device

Publications (2)

Publication Number Publication Date
JPS5224465A true JPS5224465A (en) 1977-02-23
JPS5935183B2 JPS5935183B2 (en) 1984-08-27

Family

ID=14286090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10089675A Expired JPS5935183B2 (en) 1975-08-20 1975-08-20 Shock barrier semiconductor device

Country Status (1)

Country Link
JP (1) JPS5935183B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860577A (en) * 1981-10-07 1983-04-11 Hitachi Ltd Semiconductor device
JPS5918680A (en) * 1982-07-01 1984-01-31 ゼネラル・エレクトリツク・カンパニイ Semiconductor device
JPS5936264U (en) * 1982-07-27 1984-03-07 サンケン電気株式会社 Shock barrier semiconductor device
JPS5994453A (en) * 1982-10-25 1984-05-31 ゼネラル・エレクトリック・カンパニイ High voltage semiconductor device reducing on resistance
JPS6074582A (en) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ Pinch rectifier
JPS61147570A (en) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd Schottky barrier semiconductor device
US4646115A (en) * 1983-12-20 1987-02-24 U.S. Philips Corporation Semiconductor devices having field-relief regions
US5017976A (en) * 1988-12-02 1991-05-21 Kabushiki Kaisha Toshiba Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application
EP0568269A2 (en) * 1992-04-28 1993-11-03 Mitsubishi Denki Kabushiki Kaisha Diode and method for manufacturing the same
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
WO2010021136A1 (en) * 2008-08-21 2010-02-25 昭和電工株式会社 Semiconductor device and semiconductor device manufacturing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH045432Y2 (en) * 1987-03-12 1992-02-17
JP2809253B2 (en) * 1992-10-02 1998-10-08 富士電機株式会社 Injection control type Schottky barrier rectifier
DE19723176C1 (en) * 1997-06-03 1998-08-27 Daimler Benz Ag Semiconductor device with alternate p-n and Schottky junctions

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860577A (en) * 1981-10-07 1983-04-11 Hitachi Ltd Semiconductor device
JPS5918680A (en) * 1982-07-01 1984-01-31 ゼネラル・エレクトリツク・カンパニイ Semiconductor device
JPH0347593B2 (en) * 1982-07-01 1991-07-19 Gen Electric
JPH0229729Y2 (en) * 1982-07-27 1990-08-09
JPS5936264U (en) * 1982-07-27 1984-03-07 サンケン電気株式会社 Shock barrier semiconductor device
JPS5994453A (en) * 1982-10-25 1984-05-31 ゼネラル・エレクトリック・カンパニイ High voltage semiconductor device reducing on resistance
JPS6074582A (en) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ Pinch rectifier
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
JPH0370907B2 (en) * 1983-08-08 1991-11-11 Gen Electric
US4646115A (en) * 1983-12-20 1987-02-24 U.S. Philips Corporation Semiconductor devices having field-relief regions
JPS61147570A (en) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd Schottky barrier semiconductor device
JPH0476218B2 (en) * 1984-12-20 1992-12-03 Sanyo Electric Co
US5017976A (en) * 1988-12-02 1991-05-21 Kabushiki Kaisha Toshiba Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
EP0568269A2 (en) * 1992-04-28 1993-11-03 Mitsubishi Denki Kabushiki Kaisha Diode and method for manufacturing the same
US5389815A (en) * 1992-04-28 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
EP0568269A3 (en) * 1992-04-28 1995-04-19 Mitsubishi Electric Corp Diode and method for manufacturing the same.
WO2010021136A1 (en) * 2008-08-21 2010-02-25 昭和電工株式会社 Semiconductor device and semiconductor device manufacturing method
US9035321B2 (en) 2008-08-21 2015-05-19 Showa Denko K.K. Semiconductor device and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS5935183B2 (en) 1984-08-27

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