JPS51144575A - Schottoky barrier semiconductor device - Google Patents
Schottoky barrier semiconductor deviceInfo
- Publication number
- JPS51144575A JPS51144575A JP6828175A JP6828175A JPS51144575A JP S51144575 A JPS51144575 A JP S51144575A JP 6828175 A JP6828175 A JP 6828175A JP 6828175 A JP6828175 A JP 6828175A JP S51144575 A JPS51144575 A JP S51144575A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- barrier semiconductor
- schottoky
- schottoky barrier
- spite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: A schottoky barrier semiconductor device having a low forward voltage in spite of a high reverse break-down voltage.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6828175A JPS5845831B2 (en) | 1975-06-06 | 1975-06-06 | Method for manufacturing a shotgun barrier semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6828175A JPS5845831B2 (en) | 1975-06-06 | 1975-06-06 | Method for manufacturing a shotgun barrier semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51144575A true JPS51144575A (en) | 1976-12-11 |
JPS5845831B2 JPS5845831B2 (en) | 1983-10-12 |
Family
ID=13369212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6828175A Expired JPS5845831B2 (en) | 1975-06-06 | 1975-06-06 | Method for manufacturing a shotgun barrier semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5845831B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212184A (en) * | 1982-02-04 | 1983-12-09 | Sanyo Electric Co Ltd | Schottky barrier diode associated in semiconductor integrated circuit |
JPWO2015194590A1 (en) * | 2014-06-18 | 2017-04-20 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
1975
- 1975-06-06 JP JP6828175A patent/JPS5845831B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212184A (en) * | 1982-02-04 | 1983-12-09 | Sanyo Electric Co Ltd | Schottky barrier diode associated in semiconductor integrated circuit |
JPH048955B2 (en) * | 1982-02-04 | 1992-02-18 | ||
JPWO2015194590A1 (en) * | 2014-06-18 | 2017-04-20 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US10050133B2 (en) | 2014-06-18 | 2018-08-14 | Fuji Electric Co., Ltd. | Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5845831B2 (en) | 1983-10-12 |
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