JPS6461066A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS6461066A JPS6461066A JP21944787A JP21944787A JPS6461066A JP S6461066 A JPS6461066 A JP S6461066A JP 21944787 A JP21944787 A JP 21944787A JP 21944787 A JP21944787 A JP 21944787A JP S6461066 A JPS6461066 A JP S6461066A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- electrode
- approx
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enhance a breakdown strength of gate, drain electrodes and to increase an output current by providing an opposite conductivity type semiconductor layer to that of one conductivity type active layer on part of the surface between the gate electrode and the drain electrode of a semiconductor chip. CONSTITUTION:A semiconductor wafer Sa is formed of a semiinsulating GaAs substrate 1a, a GaAs buffer layer 7 of the surface of the substrate, and an n-type Al0.3Ga0.7As active layer 2a of the surface of the layer 7. A drain electrode 14 and a source electrode 15 of Au-Ga and Ni alloys are formed at both sides of the surface of the wafer Sa, and a gate electrode 16 for forming a Schottky junction with the layer 2a is formed of Ti-Au at the intermediate therebetween. A p-type GaAs layer 13 having approx. 10<18>cm<-3> of impurity concentration and approx. 20nm of thickness is formed on part between the electrodes 16 and 14 of the surface of the layer 2a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944787A JPS6461066A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944787A JPS6461066A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461066A true JPS6461066A (en) | 1989-03-08 |
Family
ID=16735554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21944787A Pending JPS6461066A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461066A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6278144B1 (en) | 1998-02-12 | 2001-08-21 | Nec Corporation | Field-effect transistor and method for manufacturing the field effect transistor |
JP5550740B2 (en) * | 2010-11-10 | 2014-07-16 | 三菱電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
1987
- 1987-09-01 JP JP21944787A patent/JPS6461066A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6278144B1 (en) | 1998-02-12 | 2001-08-21 | Nec Corporation | Field-effect transistor and method for manufacturing the field effect transistor |
JP5550740B2 (en) * | 2010-11-10 | 2014-07-16 | 三菱電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
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