JPS6461066A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6461066A
JPS6461066A JP21944787A JP21944787A JPS6461066A JP S6461066 A JPS6461066 A JP S6461066A JP 21944787 A JP21944787 A JP 21944787A JP 21944787 A JP21944787 A JP 21944787A JP S6461066 A JPS6461066 A JP S6461066A
Authority
JP
Japan
Prior art keywords
layer
gaas
electrode
approx
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21944787A
Other languages
Japanese (ja)
Inventor
Hikari Toida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21944787A priority Critical patent/JPS6461066A/en
Publication of JPS6461066A publication Critical patent/JPS6461066A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enhance a breakdown strength of gate, drain electrodes and to increase an output current by providing an opposite conductivity type semiconductor layer to that of one conductivity type active layer on part of the surface between the gate electrode and the drain electrode of a semiconductor chip. CONSTITUTION:A semiconductor wafer Sa is formed of a semiinsulating GaAs substrate 1a, a GaAs buffer layer 7 of the surface of the substrate, and an n-type Al0.3Ga0.7As active layer 2a of the surface of the layer 7. A drain electrode 14 and a source electrode 15 of Au-Ga and Ni alloys are formed at both sides of the surface of the wafer Sa, and a gate electrode 16 for forming a Schottky junction with the layer 2a is formed of Ti-Au at the intermediate therebetween. A p-type GaAs layer 13 having approx. 10<18>cm<-3> of impurity concentration and approx. 20nm of thickness is formed on part between the electrodes 16 and 14 of the surface of the layer 2a.
JP21944787A 1987-09-01 1987-09-01 Field-effect transistor Pending JPS6461066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21944787A JPS6461066A (en) 1987-09-01 1987-09-01 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21944787A JPS6461066A (en) 1987-09-01 1987-09-01 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6461066A true JPS6461066A (en) 1989-03-08

Family

ID=16735554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21944787A Pending JPS6461066A (en) 1987-09-01 1987-09-01 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6461066A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278144B1 (en) 1998-02-12 2001-08-21 Nec Corporation Field-effect transistor and method for manufacturing the field effect transistor
JP5550740B2 (en) * 2010-11-10 2014-07-16 三菱電機株式会社 Semiconductor device and manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278144B1 (en) 1998-02-12 2001-08-21 Nec Corporation Field-effect transistor and method for manufacturing the field effect transistor
JP5550740B2 (en) * 2010-11-10 2014-07-16 三菱電機株式会社 Semiconductor device and manufacturing method of semiconductor device

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