JPS54107273A - Production of field effect transistor - Google Patents

Production of field effect transistor

Info

Publication number
JPS54107273A
JPS54107273A JP1469878A JP1469878A JPS54107273A JP S54107273 A JPS54107273 A JP S54107273A JP 1469878 A JP1469878 A JP 1469878A JP 1469878 A JP1469878 A JP 1469878A JP S54107273 A JPS54107273 A JP S54107273A
Authority
JP
Japan
Prior art keywords
layer
metal
gate electrode
photo resistor
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1469878A
Other languages
Japanese (ja)
Other versions
JPS626675B2 (en
Inventor
Takeshi Konuma
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1469878A priority Critical patent/JPS54107273A/en
Publication of JPS54107273A publication Critical patent/JPS54107273A/en
Publication of JPS626675B2 publication Critical patent/JPS626675B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To realize the production method of a FET where the gate length can be shortened and the gate electrode resistance can be reduced and reliability is improved, by forming a Schottky junction in a cleaned semiconductor conductive layer. CONSTITUTION:N-type GaAs layer 2 is grown on semi-insulating GaAs substrate 1, and source electrode 3 and drain electrode 4 are formed. Next, after cleaning n-type GaAs layer 2, the first layer metal 5a which becomes a gate electrode is evaporated by sputtering, and photo resistor 6 is applied to all the surface. Then, windows are provided in electrodes 3 and 4 and at the center between both electrodes by photo etching, and the second layer metal 5b which becomes a gate electrode is caused to adhere to the surface. After that, photo resistor 6 and Al metal on photo resistor 6 are removed simultaneously, and metallic layer 5b is used as a mask to plasma-etch metal 5a.
JP1469878A 1978-02-09 1978-02-09 Production of field effect transistor Granted JPS54107273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1469878A JPS54107273A (en) 1978-02-09 1978-02-09 Production of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1469878A JPS54107273A (en) 1978-02-09 1978-02-09 Production of field effect transistor

Publications (2)

Publication Number Publication Date
JPS54107273A true JPS54107273A (en) 1979-08-22
JPS626675B2 JPS626675B2 (en) 1987-02-12

Family

ID=11868397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1469878A Granted JPS54107273A (en) 1978-02-09 1978-02-09 Production of field effect transistor

Country Status (1)

Country Link
JP (1) JPS54107273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (en) * 1983-01-26 1984-08-06 Nec Corp Semiconductor device
JPS60123067A (en) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63231143A (en) * 1987-03-18 1988-09-27 株式会社日立製作所 Air conditioner
JPH09229500A (en) * 1995-12-27 1997-09-05 Mando Mach Co Ltd Air conditioner for multiple rooms

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (en) * 1983-01-26 1984-08-06 Nec Corp Semiconductor device
JPH029452B2 (en) * 1983-01-26 1990-03-02 Nippon Electric Co
JPS60123067A (en) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS626675B2 (en) 1987-02-12

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