JPS54143077A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54143077A JPS54143077A JP5169278A JP5169278A JPS54143077A JP S54143077 A JPS54143077 A JP S54143077A JP 5169278 A JP5169278 A JP 5169278A JP 5169278 A JP5169278 A JP 5169278A JP S54143077 A JPS54143077 A JP S54143077A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- film
- approximate
- gate
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To improve characteristics of a Schottky barrier gate FET by covering the active layer, formed in a mesa shape, with an insulation film, by forming a gate electrode window and a gate electrode in the order, and by providing source and drain electrodes.
CONSTITUTION: A GaAs active layer on semi-insulating GaAs substrate 11 is masa- etched and after CVDSiO213 is deposited to approximate 2000Å, window 13a is made to a gate length of approximate 1μm. The surface of film 13 is etched to approximate 500Å. Next, photoetching and flank-etching are done combinationally to provide Al gate electrode 14 and after the surface is covered selectively with SiO215, Au electrodes 16 and 17 are formed selectively. In the above constitution, since film 13 is made sufficiently thin, a break of the gate electrode is prevented and fine patterning is simplified; and the damage and contamination of the active- layer surface give no influence since depletion layer Dp reaches the vertical part of film 13 by the potential of the Schottky barrier. The channel-surface condition is therefore excellent, the gate length is short, and a hihg-performance device can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5169278A JPS54143077A (en) | 1978-04-28 | 1978-04-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5169278A JPS54143077A (en) | 1978-04-28 | 1978-04-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54143077A true JPS54143077A (en) | 1979-11-07 |
Family
ID=12893943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5169278A Pending JPS54143077A (en) | 1978-04-28 | 1978-04-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54143077A (en) |
-
1978
- 1978-04-28 JP JP5169278A patent/JPS54143077A/en active Pending
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