JPS54143077A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54143077A
JPS54143077A JP5169278A JP5169278A JPS54143077A JP S54143077 A JPS54143077 A JP S54143077A JP 5169278 A JP5169278 A JP 5169278A JP 5169278 A JP5169278 A JP 5169278A JP S54143077 A JPS54143077 A JP S54143077A
Authority
JP
Japan
Prior art keywords
gate electrode
film
approximate
gate
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5169278A
Other languages
Japanese (ja)
Inventor
Yutaka Hirano
Masanobu Ito
Yasuo Nemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5169278A priority Critical patent/JPS54143077A/en
Publication of JPS54143077A publication Critical patent/JPS54143077A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To improve characteristics of a Schottky barrier gate FET by covering the active layer, formed in a mesa shape, with an insulation film, by forming a gate electrode window and a gate electrode in the order, and by providing source and drain electrodes.
CONSTITUTION: A GaAs active layer on semi-insulating GaAs substrate 11 is masa- etched and after CVDSiO213 is deposited to approximate 2000Å, window 13a is made to a gate length of approximate 1μm. The surface of film 13 is etched to approximate 500Å. Next, photoetching and flank-etching are done combinationally to provide Al gate electrode 14 and after the surface is covered selectively with SiO215, Au electrodes 16 and 17 are formed selectively. In the above constitution, since film 13 is made sufficiently thin, a break of the gate electrode is prevented and fine patterning is simplified; and the damage and contamination of the active- layer surface give no influence since depletion layer Dp reaches the vertical part of film 13 by the potential of the Schottky barrier. The channel-surface condition is therefore excellent, the gate length is short, and a hihg-performance device can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP5169278A 1978-04-28 1978-04-28 Manufacture of semiconductor device Pending JPS54143077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5169278A JPS54143077A (en) 1978-04-28 1978-04-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5169278A JPS54143077A (en) 1978-04-28 1978-04-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54143077A true JPS54143077A (en) 1979-11-07

Family

ID=12893943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5169278A Pending JPS54143077A (en) 1978-04-28 1978-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54143077A (en)

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