JPS5479574A - Manufacture of mis semiconductor device - Google Patents

Manufacture of mis semiconductor device

Info

Publication number
JPS5479574A
JPS5479574A JP15000677A JP15000677A JPS5479574A JP S5479574 A JPS5479574 A JP S5479574A JP 15000677 A JP15000677 A JP 15000677A JP 15000677 A JP15000677 A JP 15000677A JP S5479574 A JPS5479574 A JP S5479574A
Authority
JP
Japan
Prior art keywords
film
gaas
semiconductor device
operation layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15000677A
Other languages
Japanese (ja)
Other versions
JPS6020907B2 (en
Inventor
Kinshiro Kosemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15000677A priority Critical patent/JPS6020907B2/en
Publication of JPS5479574A publication Critical patent/JPS5479574A/en
Publication of JPS6020907B2 publication Critical patent/JPS6020907B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve reliability with a leak current reduced by forming a gate insulating film on a MIS semiconductor device using GaAs, by directly oxidizing the GaAS semiconductor in deionized water.
CONSTITUTION: On semi-insulating GaAs substrate 1, GaAs operation layer 2 is vapor-phase-epitaxy-grown, on which source electrode 3 and drain electrode 4 of Au-Ge are formed at an interval. Next, the entire surface is covered with SiO2 film 5 by a CVD method, electrodes 3 and 4 are removed partially, and electrode wirings 6 and 7 of Cr-Pt-Au are adhered which elongate from exposed electrodes 3 and 4 onto film 5. Then, the film between those electrodes is removed to expose one part of operation layer 2 and the substrate is boiled in deionized water of approximate 100°C under one atmosphere to produce GaAs gate oxidized film 8. Next, Al gate electrode 9 is provided onto film 8, thereby obtaining a MIS semiconductor device. in this way, since gate insulating film 8 is formed by directly oxidizing operation layer 2, the leak of a current decreases.
COPYRIGHT: (C)1979,JPO&Japio
JP15000677A 1977-12-07 1977-12-07 Manufacturing method of MIS type semiconductor device Expired JPS6020907B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15000677A JPS6020907B2 (en) 1977-12-07 1977-12-07 Manufacturing method of MIS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15000677A JPS6020907B2 (en) 1977-12-07 1977-12-07 Manufacturing method of MIS type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5479574A true JPS5479574A (en) 1979-06-25
JPS6020907B2 JPS6020907B2 (en) 1985-05-24

Family

ID=15487401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15000677A Expired JPS6020907B2 (en) 1977-12-07 1977-12-07 Manufacturing method of MIS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6020907B2 (en)

Also Published As

Publication number Publication date
JPS6020907B2 (en) 1985-05-24

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