JPS57198661A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57198661A
JPS57198661A JP8399581A JP8399581A JPS57198661A JP S57198661 A JPS57198661 A JP S57198661A JP 8399581 A JP8399581 A JP 8399581A JP 8399581 A JP8399581 A JP 8399581A JP S57198661 A JPS57198661 A JP S57198661A
Authority
JP
Japan
Prior art keywords
layer
gaas
doped
highly resistive
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8399581A
Other languages
Japanese (ja)
Other versions
JPS6354231B2 (en
Inventor
Sukehisa Hiyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8399581A priority Critical patent/JPS57198661A/en
Publication of JPS57198661A publication Critical patent/JPS57198661A/en
Publication of JPS6354231B2 publication Critical patent/JPS6354231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To avoid the decrease in electron mobility on an electron storing layer, when a low impurity concentration GaAs layer and an n type AlGaAs layer are provided on a semi-insulating substrate and a heterostruction semiconductor is formed, by porviding a highly resistive AlGaAs layer between the substrate and the GaAs layer. CONSTITUTION:On the Cr doped semi-insulating GaAs substrate 11, a non-doped highly resistive GaAs layer 12, a non-doped highly resistive AlGaAs layer 13, a non-doped GaAs layer 14, an n type Al GaAs layer 15, and an n type GaAs layer 16 are layered and grown by molecular beam epitaxial method. Then the central part of the layer 16 is etched away. A Schottky gate electrode 17 with a three layered structure comprising Ti-Pt-Au is attached to the exposed layer 15. A source electrode 18 and a drain electrode 19 are deposited on both sides of the electrode 17 on the layer 16, with the contact being separated by SiO2 films 20. In this constitution, the thin electron storing layer 21 is formed on the surface of the layer 14 when the layer 15 is grown on the layer 14 at the heterostruction interface.
JP8399581A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57198661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8399581A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399581A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57198661A true JPS57198661A (en) 1982-12-06
JPS6354231B2 JPS6354231B2 (en) 1988-10-27

Family

ID=13818109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399581A Granted JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198661A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Manufacture of compound semiconductor device
JPS6149476A (en) * 1984-08-17 1986-03-11 Sony Corp Field-effect transistor
JPS61253869A (en) * 1985-05-02 1986-11-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS6230360A (en) * 1985-04-05 1987-02-09 Fujitsu Ltd Superhigh frequency integrated circuit device
JPH01143271A (en) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd Manufacture of hetero junction type field-effect transistor
JPH08124943A (en) * 1994-10-28 1996-05-17 Nec Corp Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Manufacture of compound semiconductor device
JPS6149476A (en) * 1984-08-17 1986-03-11 Sony Corp Field-effect transistor
JPS6230360A (en) * 1985-04-05 1987-02-09 Fujitsu Ltd Superhigh frequency integrated circuit device
JPS61253869A (en) * 1985-05-02 1986-11-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPH01143271A (en) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd Manufacture of hetero junction type field-effect transistor
JPH08124943A (en) * 1994-10-28 1996-05-17 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6354231B2 (en) 1988-10-27

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