JPS5671980A - Schottky barrier gate type field effect transistor and preparation method thereof - Google Patents

Schottky barrier gate type field effect transistor and preparation method thereof

Info

Publication number
JPS5671980A
JPS5671980A JP14908679A JP14908679A JPS5671980A JP S5671980 A JPS5671980 A JP S5671980A JP 14908679 A JP14908679 A JP 14908679A JP 14908679 A JP14908679 A JP 14908679A JP S5671980 A JPS5671980 A JP S5671980A
Authority
JP
Japan
Prior art keywords
gate
etched
epitaxial layer
preparation
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14908679A
Other languages
Japanese (ja)
Other versions
JPS6115596B2 (en
Inventor
Masao Sumiyoshi
Takuji Shimanoe
Aiichiro Nara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14908679A priority Critical patent/JPS5671980A/en
Publication of JPS5671980A publication Critical patent/JPS5671980A/en
Publication of JPS6115596B2 publication Critical patent/JPS6115596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an FET having a good high frequency characteristics with a good yield without a special system or a complicated process by a method wherein using a formed Sochottky barrie (SB) gate electrode as a mask, an epitaxial layer under a gate electrode is etched. CONSTITUTION:As in the perfectly same process in the past, a gate electrode 7 is formed in a concave part of an N epitaxial layer 2 of a GaAs semi-insulating substrate 1. Next thereto, when the epitaxial layer 2 is etched taking the electrode 7 as a mask, a side is etched and Lgo<lg against a gate length lg and a lgo can be easily formed in approximately 5mum with a good yield, and further, a gate becomes a mesa constitution and a gate pressure tightness is improved. In this way, without a special system and a special process, a SBFET having an excellent high frequency characteristics is obtained.
JP14908679A 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof Granted JPS5671980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14908679A JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14908679A JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Publications (2)

Publication Number Publication Date
JPS5671980A true JPS5671980A (en) 1981-06-15
JPS6115596B2 JPS6115596B2 (en) 1986-04-24

Family

ID=15467387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14908679A Granted JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Country Status (1)

Country Link
JP (1) JPS5671980A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122632A (en) * 1988-11-01 1990-05-10 Mitsubishi Electric Corp Manufacture of field effect transistor
FR2685819A1 (en) * 1991-12-31 1993-07-02 Thomson Composants Microondes METHOD FOR PRODUCING A MICROFREQUENCY FIELD EFFECT TRANSISTOR
US5508539A (en) * 1994-04-29 1996-04-16 Motorola, Inc. Elevated-gate field effect transistor structure and fabrication method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143609A (en) * 1986-12-08 1988-06-15 Nikon Corp Positioning device for moving body

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122632A (en) * 1988-11-01 1990-05-10 Mitsubishi Electric Corp Manufacture of field effect transistor
FR2685819A1 (en) * 1991-12-31 1993-07-02 Thomson Composants Microondes METHOD FOR PRODUCING A MICROFREQUENCY FIELD EFFECT TRANSISTOR
EP0550317A1 (en) * 1991-12-31 1993-07-07 Thomson Composants Microondes Manufacturing method of hyperfrequency field effect transistors
US5508539A (en) * 1994-04-29 1996-04-16 Motorola, Inc. Elevated-gate field effect transistor structure and fabrication method
US5631175A (en) * 1994-04-29 1997-05-20 Motorola, Inc. Method for fabricating an elevated-gate field effect transistor

Also Published As

Publication number Publication date
JPS6115596B2 (en) 1986-04-24

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