JPS5671980A - Schottky barrier gate type field effect transistor and preparation method thereof - Google Patents
Schottky barrier gate type field effect transistor and preparation method thereofInfo
- Publication number
- JPS5671980A JPS5671980A JP14908679A JP14908679A JPS5671980A JP S5671980 A JPS5671980 A JP S5671980A JP 14908679 A JP14908679 A JP 14908679A JP 14908679 A JP14908679 A JP 14908679A JP S5671980 A JPS5671980 A JP S5671980A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- etched
- epitaxial layer
- preparation
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title 1
- 238000002353 field-effect transistor method Methods 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain an FET having a good high frequency characteristics with a good yield without a special system or a complicated process by a method wherein using a formed Sochottky barrie (SB) gate electrode as a mask, an epitaxial layer under a gate electrode is etched. CONSTITUTION:As in the perfectly same process in the past, a gate electrode 7 is formed in a concave part of an N epitaxial layer 2 of a GaAs semi-insulating substrate 1. Next thereto, when the epitaxial layer 2 is etched taking the electrode 7 as a mask, a side is etched and Lgo<lg against a gate length lg and a lgo can be easily formed in approximately 5mum with a good yield, and further, a gate becomes a mesa constitution and a gate pressure tightness is improved. In this way, without a special system and a special process, a SBFET having an excellent high frequency characteristics is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14908679A JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14908679A JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5671980A true JPS5671980A (en) | 1981-06-15 |
JPS6115596B2 JPS6115596B2 (en) | 1986-04-24 |
Family
ID=15467387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14908679A Granted JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5671980A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122632A (en) * | 1988-11-01 | 1990-05-10 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
FR2685819A1 (en) * | 1991-12-31 | 1993-07-02 | Thomson Composants Microondes | METHOD FOR PRODUCING A MICROFREQUENCY FIELD EFFECT TRANSISTOR |
US5508539A (en) * | 1994-04-29 | 1996-04-16 | Motorola, Inc. | Elevated-gate field effect transistor structure and fabrication method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63143609A (en) * | 1986-12-08 | 1988-06-15 | Nikon Corp | Positioning device for moving body |
-
1979
- 1979-11-15 JP JP14908679A patent/JPS5671980A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122632A (en) * | 1988-11-01 | 1990-05-10 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
FR2685819A1 (en) * | 1991-12-31 | 1993-07-02 | Thomson Composants Microondes | METHOD FOR PRODUCING A MICROFREQUENCY FIELD EFFECT TRANSISTOR |
EP0550317A1 (en) * | 1991-12-31 | 1993-07-07 | Thomson Composants Microondes | Manufacturing method of hyperfrequency field effect transistors |
US5508539A (en) * | 1994-04-29 | 1996-04-16 | Motorola, Inc. | Elevated-gate field effect transistor structure and fabrication method |
US5631175A (en) * | 1994-04-29 | 1997-05-20 | Motorola, Inc. | Method for fabricating an elevated-gate field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6115596B2 (en) | 1986-04-24 |
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