JPS54108583A - Manufacture of field effect transistor - Google Patents
Manufacture of field effect transistorInfo
- Publication number
- JPS54108583A JPS54108583A JP1554378A JP1554378A JPS54108583A JP S54108583 A JPS54108583 A JP S54108583A JP 1554378 A JP1554378 A JP 1554378A JP 1554378 A JP1554378 A JP 1554378A JP S54108583 A JPS54108583 A JP S54108583A
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- gate
- metal
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce source DC resistance by determining a source-gate region or drain-gate region by self-alignment and by adhering ohmic contact metal onto a gate via Schottky metal when adhering ohmic contact metal onto the source-gate region.
CONSTITUTION: On semi-insulating GaAs substrate 1, N-type GaAs layer 2 is formed by epitaxial growth, and region 3 to be a channel is left by anisotropic etching in parallel to the source-drain region while others are made thin. After N-type impurities are injected into the entire surface via Si3N4 film 4, a heat treatment is carried out to form N+-type gate region 5' in region 3 and N+-type source-drain region 5 in layer 2. Then, the entire surface is covered with resist film 6 except region 5', where Schottky metal 7 of W or the like is adhered, and ohmic contact metal 8 of Au-Ge alloy is adhered to region 5. In this case, metal 8 is formed on metal 7 as well at the same time, and the gate resistance is decreased to improve high-frequency characteristics.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1554378A JPS59986B2 (en) | 1978-02-13 | 1978-02-13 | Method for manufacturing field effect transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1554378A JPS59986B2 (en) | 1978-02-13 | 1978-02-13 | Method for manufacturing field effect transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54108583A true JPS54108583A (en) | 1979-08-25 |
JPS59986B2 JPS59986B2 (en) | 1984-01-10 |
Family
ID=11891697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1554378A Expired JPS59986B2 (en) | 1978-02-13 | 1978-02-13 | Method for manufacturing field effect transistors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59986B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152669A (en) * | 1983-02-21 | 1984-08-31 | Mitsubishi Electric Corp | Field effect transistor |
-
1978
- 1978-02-13 JP JP1554378A patent/JPS59986B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152669A (en) * | 1983-02-21 | 1984-08-31 | Mitsubishi Electric Corp | Field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS59986B2 (en) | 1984-01-10 |
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