JPS54133081A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS54133081A
JPS54133081A JP4105678A JP4105678A JPS54133081A JP S54133081 A JPS54133081 A JP S54133081A JP 4105678 A JP4105678 A JP 4105678A JP 4105678 A JP4105678 A JP 4105678A JP S54133081 A JPS54133081 A JP S54133081A
Authority
JP
Japan
Prior art keywords
channel
region
layer
ion injection
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4105678A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Shigetoshi Takayanagi
Takeshi Konuma
Toshio Sugawa
Kaoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4105678A priority Critical patent/JPS54133081A/en
Publication of JPS54133081A publication Critical patent/JPS54133081A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To reduce the surface effect and to make the device low in noise, by forming the channel cut off region having high concentration of opposite conduction type as the channel on the island region surface with ion injection without decreasing the impurity concentration of the surface of island region.
CONSTITUTION: The n type island region 22 is made by ion injection to the p type Si substarate 1. The concentration distribution is maximum at the surface. The n+ source and drain 23, 24 and the p+ gate region 26 are provided by ion injection again. Further, along the channel between the source and drain with B ion injection, the p layer 27 is formed as the same as the gate or shallower than it, and the distribution of concentration is taken maximum at the surface. No channel current flows substantially on the surface of the island region 22 with the channel cut off region 27. With this constitution, the carrier caused on the layer 27 recombines at the surface of high concentaration immediately, the variation in the conductivity is hardly caused, the effect of surface is not delivered to the boundary surface between the layer 27 and the island 22 and the channel, and since the layer 27 cuts off the channel current, no noise component is present in the channel current.
COPYRIGHT: (C)1979,JPO&Japio
JP4105678A 1978-04-06 1978-04-06 Junction type field effect transistor Pending JPS54133081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4105678A JPS54133081A (en) 1978-04-06 1978-04-06 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4105678A JPS54133081A (en) 1978-04-06 1978-04-06 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS54133081A true JPS54133081A (en) 1979-10-16

Family

ID=12597744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4105678A Pending JPS54133081A (en) 1978-04-06 1978-04-06 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS54133081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320047A (en) * 1989-06-16 1991-01-29 Matsushita Electron Corp Semicondcutor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320047A (en) * 1989-06-16 1991-01-29 Matsushita Electron Corp Semicondcutor device

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