JPS54133081A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS54133081A JPS54133081A JP4105678A JP4105678A JPS54133081A JP S54133081 A JPS54133081 A JP S54133081A JP 4105678 A JP4105678 A JP 4105678A JP 4105678 A JP4105678 A JP 4105678A JP S54133081 A JPS54133081 A JP S54133081A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- region
- layer
- ion injection
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To reduce the surface effect and to make the device low in noise, by forming the channel cut off region having high concentration of opposite conduction type as the channel on the island region surface with ion injection without decreasing the impurity concentration of the surface of island region.
CONSTITUTION: The n type island region 22 is made by ion injection to the p type Si substarate 1. The concentration distribution is maximum at the surface. The n+ source and drain 23, 24 and the p+ gate region 26 are provided by ion injection again. Further, along the channel between the source and drain with B ion injection, the p layer 27 is formed as the same as the gate or shallower than it, and the distribution of concentration is taken maximum at the surface. No channel current flows substantially on the surface of the island region 22 with the channel cut off region 27. With this constitution, the carrier caused on the layer 27 recombines at the surface of high concentaration immediately, the variation in the conductivity is hardly caused, the effect of surface is not delivered to the boundary surface between the layer 27 and the island 22 and the channel, and since the layer 27 cuts off the channel current, no noise component is present in the channel current.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4105678A JPS54133081A (en) | 1978-04-06 | 1978-04-06 | Junction type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4105678A JPS54133081A (en) | 1978-04-06 | 1978-04-06 | Junction type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54133081A true JPS54133081A (en) | 1979-10-16 |
Family
ID=12597744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4105678A Pending JPS54133081A (en) | 1978-04-06 | 1978-04-06 | Junction type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54133081A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0320047A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | Semicondcutor device |
-
1978
- 1978-04-06 JP JP4105678A patent/JPS54133081A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0320047A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | Semicondcutor device |
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