JPS5489587A - Mos field effect type transistor - Google Patents
Mos field effect type transistorInfo
- Publication number
- JPS5489587A JPS5489587A JP15966077A JP15966077A JPS5489587A JP S5489587 A JPS5489587 A JP S5489587A JP 15966077 A JP15966077 A JP 15966077A JP 15966077 A JP15966077 A JP 15966077A JP S5489587 A JPS5489587 A JP S5489587A
- Authority
- JP
- Japan
- Prior art keywords
- region
- mosfet
- source region
- substrate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enable to provide the great freedom of source wiring given by V- MOSFET and the great mobility given by MOSFET, by forming the region of the same conduction type as the source region on the slope of the V-shaped groove.
CONSTITUTION: The device provides the drain region 15 formed along the upper surface of the semiconductor substrate 11, the gate region 16G formed in contact with it, and the source region 12 formed in wide range along the surface of the substrate 11. The V-shaped groove 17 is made toward longitudinal direction of the substrate 11 from the gate region 16G to the source region 12, and the n+ type layer 21 the same conduction type as the source region 12 is formed on the slope of the V- shaped groove 17. Accordingly, while keeping the location of the source region 12 the same as V-MOSFET with the insertion of the n+ type layer 21, MOSFET consisting of conventional drain D, gate G and source S is formed on the upper surface of the substrate 11, and the channel 25 is located on the 1, 0, 0, plane of crystal.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15966077A JPS5489587A (en) | 1977-12-27 | 1977-12-27 | Mos field effect type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15966077A JPS5489587A (en) | 1977-12-27 | 1977-12-27 | Mos field effect type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5489587A true JPS5489587A (en) | 1979-07-16 |
Family
ID=15698549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15966077A Pending JPS5489587A (en) | 1977-12-27 | 1977-12-27 | Mos field effect type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5489587A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688365A (en) * | 1979-12-21 | 1981-07-17 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1977
- 1977-12-27 JP JP15966077A patent/JPS5489587A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688365A (en) * | 1979-12-21 | 1981-07-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0253950B2 (en) * | 1979-12-21 | 1990-11-20 | Fujitsu Ltd |
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