JPS5489587A - Mos field effect type transistor - Google Patents

Mos field effect type transistor

Info

Publication number
JPS5489587A
JPS5489587A JP15966077A JP15966077A JPS5489587A JP S5489587 A JPS5489587 A JP S5489587A JP 15966077 A JP15966077 A JP 15966077A JP 15966077 A JP15966077 A JP 15966077A JP S5489587 A JPS5489587 A JP S5489587A
Authority
JP
Japan
Prior art keywords
region
mosfet
source region
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15966077A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15966077A priority Critical patent/JPS5489587A/en
Publication of JPS5489587A publication Critical patent/JPS5489587A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable to provide the great freedom of source wiring given by V- MOSFET and the great mobility given by MOSFET, by forming the region of the same conduction type as the source region on the slope of the V-shaped groove.
CONSTITUTION: The device provides the drain region 15 formed along the upper surface of the semiconductor substrate 11, the gate region 16G formed in contact with it, and the source region 12 formed in wide range along the surface of the substrate 11. The V-shaped groove 17 is made toward longitudinal direction of the substrate 11 from the gate region 16G to the source region 12, and the n+ type layer 21 the same conduction type as the source region 12 is formed on the slope of the V- shaped groove 17. Accordingly, while keeping the location of the source region 12 the same as V-MOSFET with the insertion of the n+ type layer 21, MOSFET consisting of conventional drain D, gate G and source S is formed on the upper surface of the substrate 11, and the channel 25 is located on the 1, 0, 0, plane of crystal.
COPYRIGHT: (C)1979,JPO&Japio
JP15966077A 1977-12-27 1977-12-27 Mos field effect type transistor Pending JPS5489587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15966077A JPS5489587A (en) 1977-12-27 1977-12-27 Mos field effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15966077A JPS5489587A (en) 1977-12-27 1977-12-27 Mos field effect type transistor

Publications (1)

Publication Number Publication Date
JPS5489587A true JPS5489587A (en) 1979-07-16

Family

ID=15698549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15966077A Pending JPS5489587A (en) 1977-12-27 1977-12-27 Mos field effect type transistor

Country Status (1)

Country Link
JP (1) JPS5489587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688365A (en) * 1979-12-21 1981-07-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688365A (en) * 1979-12-21 1981-07-17 Fujitsu Ltd Manufacture of semiconductor device
JPH0253950B2 (en) * 1979-12-21 1990-11-20 Fujitsu Ltd

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