JPS548476A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS548476A
JPS548476A JP7420077A JP7420077A JPS548476A JP S548476 A JPS548476 A JP S548476A JP 7420077 A JP7420077 A JP 7420077A JP 7420077 A JP7420077 A JP 7420077A JP S548476 A JPS548476 A JP S548476A
Authority
JP
Japan
Prior art keywords
providing
semiconductor device
gate electrode
drain
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7420077A
Other languages
Japanese (ja)
Inventor
Masayuki Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP7420077A priority Critical patent/JPS548476A/en
Publication of JPS548476A publication Critical patent/JPS548476A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the short channel effect and to obtain FET having non-saturation characteristics, by providing the position of the gate electrode near the source electrode from the center of the drain electrode, in the transversal type FET providing the source, drain and gate electrode on the same exposed surface of the substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP7420077A 1977-06-22 1977-06-22 Semiconductor device Pending JPS548476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7420077A JPS548476A (en) 1977-06-22 1977-06-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7420077A JPS548476A (en) 1977-06-22 1977-06-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS548476A true JPS548476A (en) 1979-01-22

Family

ID=13540294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7420077A Pending JPS548476A (en) 1977-06-22 1977-06-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS548476A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574246U (en) * 1980-06-06 1982-01-09
JPS5764976A (en) * 1980-10-07 1982-04-20 Sanyo Electric Co Ltd Junction type field effect transistor
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574246U (en) * 1980-06-06 1982-01-09
JPH0115184Y2 (en) * 1980-06-06 1989-05-08
JPS5764976A (en) * 1980-10-07 1982-04-20 Sanyo Electric Co Ltd Junction type field effect transistor
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5413779A (en) Semiconductor integrated circuit device
JPS5222480A (en) Insulating gate field effect transistor
JPS5226177A (en) Semi-conductor unit
JPS5362985A (en) Mis type field effect transistor and its production
JPS5530855A (en) Semiconductor optical device
JPS548476A (en) Semiconductor device
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS52117586A (en) Semiconductor device
JPS52137922A (en) Solid photographing device
JPS5215274A (en) Semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS53118981A (en) Semiconductor device
JPS5434687A (en) Semiconductor device
JPS5257786A (en) Field effect transistor
JPS5439578A (en) Field effect semiconductor device of isolation gate type
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS5384575A (en) Semicocductor device
JPS53116079A (en) Transistor and its manufacture
JPS5286779A (en) Semiconductor device
JPS539480A (en) Semiconductor device
JPS547881A (en) Mos field effect transistor
JPS539488A (en) Production of semiconductor device
JPS53148985A (en) Semiconductor device
JPS52100875A (en) Mos transistor