JPS53148985A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53148985A
JPS53148985A JP6440777A JP6440777A JPS53148985A JP S53148985 A JPS53148985 A JP S53148985A JP 6440777 A JP6440777 A JP 6440777A JP 6440777 A JP6440777 A JP 6440777A JP S53148985 A JPS53148985 A JP S53148985A
Authority
JP
Japan
Prior art keywords
gate electrode
fet
semiconductor device
ofj
depression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6440777A
Other languages
Japanese (ja)
Other versions
JPS6148274B2 (en
Inventor
Takeshi Kimura
Michihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6440777A priority Critical patent/JPS53148985A/en
Publication of JPS53148985A publication Critical patent/JPS53148985A/en
Publication of JPS6148274B2 publication Critical patent/JPS6148274B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To secure a depression or inversion state near the channel surface and thus to reduce the noise, by providing the gate electrode on the J-FET channel formation region via an insulator film and then applying the voltage which is adverse polarity to the drain to the gate electrode based on the source ofJ-FET.
COPYRIGHT: (C)1978,JPO&Japio
JP6440777A 1977-05-31 1977-05-31 Semiconductor device Granted JPS53148985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6440777A JPS53148985A (en) 1977-05-31 1977-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6440777A JPS53148985A (en) 1977-05-31 1977-05-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53148985A true JPS53148985A (en) 1978-12-26
JPS6148274B2 JPS6148274B2 (en) 1986-10-23

Family

ID=13257414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6440777A Granted JPS53148985A (en) 1977-05-31 1977-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53148985A (en)

Also Published As

Publication number Publication date
JPS6148274B2 (en) 1986-10-23

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5366181A (en) High dielectric strength mis type transistor
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS5226177A (en) Semi-conductor unit
JPS5362985A (en) Mis type field effect transistor and its production
JPS52117586A (en) Semiconductor device
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS53148985A (en) Semiconductor device
JPS5215274A (en) Semiconductor device
JPS53118981A (en) Semiconductor device
JPS548476A (en) Semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS5257786A (en) Field effect transistor
JPS51138394A (en) Semiconductor device
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS5229180A (en) Vertical field effect semiconductive device
JPS5415681A (en) Manufacture of field effect transistor
JPS5366179A (en) Semiconductor device
JPS5212583A (en) Field effect transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS52100877A (en) Field effect transistor of junction type
JPS52127078A (en) Semiconductor device
JPS5384575A (en) Semicocductor device
JPS5286779A (en) Semiconductor device
JPS5296871A (en) Manufacture of mos type transistor