JPS56101768A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56101768A
JPS56101768A JP512480A JP512480A JPS56101768A JP S56101768 A JPS56101768 A JP S56101768A JP 512480 A JP512480 A JP 512480A JP 512480 A JP512480 A JP 512480A JP S56101768 A JPS56101768 A JP S56101768A
Authority
JP
Japan
Prior art keywords
layer
gaalas
gaas
electrode
schottky gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP512480A
Other languages
Japanese (ja)
Other versions
JPS622709B2 (en
Inventor
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP512480A priority Critical patent/JPS56101768A/en
Publication of JPS56101768A publication Critical patent/JPS56101768A/en
Publication of JPS622709B2 publication Critical patent/JPS622709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To make possible the formation of a minute metal pattern on GaAs with a line in 1mum or less width by using the conventional lithography. CONSTITUTION:A GaAlAs layer 3 is epitaxially grown, the layer being composed of a semi-insulating GaAs 1 and an operating layer 2. A photoresist pattern 4 is then formed, using the conventional lithographic method. With the pattern as a mask, a V-shaped groove is formed in the GaAlAs epitaxialy layer 3. The GaAs exposed on the bottom of the groove is etched, and then a metal electrode 7 for a Schottky gate is evaporated on the exposed region. Next the GaAlAs is removed and the Schottky gate electrode 8 is formed on the operating layer 2 by lifting-off. Then a drain electrode 9 and source electrode 10 are formed through mesa-etching. By so doing, this process makes it possible to manufacture a transistor with a Schottky gate effect showing superior high frequency characteristics and a gate length shorter than the one exceeding the limit available from the conventional lithogrphic method.
JP512480A 1980-01-18 1980-01-18 Manufacture of semiconductor device Granted JPS56101768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP512480A JPS56101768A (en) 1980-01-18 1980-01-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP512480A JPS56101768A (en) 1980-01-18 1980-01-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56101768A true JPS56101768A (en) 1981-08-14
JPS622709B2 JPS622709B2 (en) 1987-01-21

Family

ID=11602560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP512480A Granted JPS56101768A (en) 1980-01-18 1980-01-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56101768A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPS59228718A (en) * 1983-06-11 1984-12-22 Toshiba Corp Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63179325U (en) * 1987-05-11 1988-11-21
JPS644729U (en) * 1987-06-29 1989-01-12
JPH01142157A (en) * 1987-11-26 1989-06-05 Ig Tech Res Inc Roof structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (en) * 1972-08-30 1974-04-24
US4145459A (en) * 1978-02-02 1979-03-20 Rca Corporation Method of making a short gate field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (en) * 1972-08-30 1974-04-24
US4145459A (en) * 1978-02-02 1979-03-20 Rca Corporation Method of making a short gate field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPH0358177B2 (en) * 1982-02-22 1991-09-04 Tokyo Shibaura Electric Co
JPS59228718A (en) * 1983-06-11 1984-12-22 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS622709B2 (en) 1987-01-21

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