JPS5698877A - Gaas field effect transistor - Google Patents

Gaas field effect transistor

Info

Publication number
JPS5698877A
JPS5698877A JP98580A JP98580A JPS5698877A JP S5698877 A JPS5698877 A JP S5698877A JP 98580 A JP98580 A JP 98580A JP 98580 A JP98580 A JP 98580A JP S5698877 A JPS5698877 A JP S5698877A
Authority
JP
Japan
Prior art keywords
film
source
gate electrode
carrier density
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP98580A
Other languages
Japanese (ja)
Inventor
Takuji Shimanoe
Masao Sumiyoshi
Aiichiro Nara
Masaaki Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP98580A priority Critical patent/JPS5698877A/en
Publication of JPS5698877A publication Critical patent/JPS5698877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the process and obtain higher yield, by using the same materials for the electrodes for source, drain and gate that constitute the GaAs FET, and establishing at an high level the carrier density of the operation layer below the source and drain electrodes. CONSTITUTION:On the semi-insulation GaAs substrate 1, the N type operation layer 2 is grown with the carrier density of 10<17>/cm<3>. The mask of the photo resist film 3 is formed, exposing the gate electrode and the regions for the source and drain electrodes to be mounted that surround the gate electrode. Next, the region 7 with the carrier density of >6X10<19>/cm<3> is formed on the exposed layer 2 at the both side of the film 3. On the whole surface the vacuum deposition of the metal film 8 of Mo.Au, Ta.Au is performed. After removing the film 3 and the film 8, the gate electrode 8 of the Schottky barrier is formed because of the remaining film 8 at the center and the source and drain electrode 8 on both side of it are formed because of the presence of the region 7.
JP98580A 1980-01-08 1980-01-08 Gaas field effect transistor Pending JPS5698877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP98580A JPS5698877A (en) 1980-01-08 1980-01-08 Gaas field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP98580A JPS5698877A (en) 1980-01-08 1980-01-08 Gaas field effect transistor

Publications (1)

Publication Number Publication Date
JPS5698877A true JPS5698877A (en) 1981-08-08

Family

ID=11488885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP98580A Pending JPS5698877A (en) 1980-01-08 1980-01-08 Gaas field effect transistor

Country Status (1)

Country Link
JP (1) JPS5698877A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034729A2 (en) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Process for the manufacture of a GaAs semiconductor arrangement
JPS57133709U (en) * 1981-02-14 1982-08-20
JPS6077467A (en) * 1983-10-04 1985-05-02 Oki Electric Ind Co Ltd Manufacture of field effect transistor
JPH0766391A (en) * 1993-08-31 1995-03-10 Nec Corp Ohmic electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378785A (en) * 1976-12-23 1978-07-12 Fujitsu Ltd Field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378785A (en) * 1976-12-23 1978-07-12 Fujitsu Ltd Field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034729A2 (en) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Process for the manufacture of a GaAs semiconductor arrangement
JPS57133709U (en) * 1981-02-14 1982-08-20
JPS6077467A (en) * 1983-10-04 1985-05-02 Oki Electric Ind Co Ltd Manufacture of field effect transistor
JPH028457B2 (en) * 1983-10-04 1990-02-23 Oki Electric Ind Co Ltd
JPH0766391A (en) * 1993-08-31 1995-03-10 Nec Corp Ohmic electrode

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