JPS57152165A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS57152165A
JPS57152165A JP3698281A JP3698281A JPS57152165A JP S57152165 A JPS57152165 A JP S57152165A JP 3698281 A JP3698281 A JP 3698281A JP 3698281 A JP3698281 A JP 3698281A JP S57152165 A JPS57152165 A JP S57152165A
Authority
JP
Japan
Prior art keywords
concentration
ion implantation
substrate
resist
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3698281A
Other languages
Japanese (ja)
Inventor
Ryuichiro Yamamoto
Asamitsu Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3698281A priority Critical patent/JPS57152165A/en
Publication of JPS57152165A publication Critical patent/JPS57152165A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To enable to reduce the parasitic resistance in the source and drain region by a method wherein the concentration of the impurities resulting from the first and second ion implantation are provided with the specified relation. CONSTITUTION:A semiinsulating GaAs substrate 11 is covered with a resist 12 and after the ion implantation in the entire surface of the said substrate making use of the said resist 12 as a mask, the substrate 11 is further covered with the SiO2 film 13 whereon a resist 14 forms itself into the pattern for gate electrode as a high melting point metal further into the gate electrode 16 while SiO2 is removed and the implantation in the said substrate is performed making use of the resisto 17 to form a source region 18 and a drain region 19. At this time, the concentration of the impurities is controlled to indicate the maximum value of the concentration of the impurities formed by the ion implantation at that time not exceeding the double maximum value of the concentration of the impurities formed by the first time ion implantation.
JP3698281A 1981-03-13 1981-03-13 Manufacture of field effect transistor Pending JPS57152165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3698281A JPS57152165A (en) 1981-03-13 1981-03-13 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3698281A JPS57152165A (en) 1981-03-13 1981-03-13 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS57152165A true JPS57152165A (en) 1982-09-20

Family

ID=12484950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3698281A Pending JPS57152165A (en) 1981-03-13 1981-03-13 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152165A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392690A (en) * 1989-09-04 1991-04-17 Sekisui Chem Co Ltd Socket structure of duplex tube

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392690A (en) * 1989-09-04 1991-04-17 Sekisui Chem Co Ltd Socket structure of duplex tube

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