JPS6427271A - Manufacture of thin-film transistor - Google Patents

Manufacture of thin-film transistor

Info

Publication number
JPS6427271A
JPS6427271A JP18392187A JP18392187A JPS6427271A JP S6427271 A JPS6427271 A JP S6427271A JP 18392187 A JP18392187 A JP 18392187A JP 18392187 A JP18392187 A JP 18392187A JP S6427271 A JPS6427271 A JP S6427271A
Authority
JP
Japan
Prior art keywords
film
transparent insulating
insulating film
patterned
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18392187A
Other languages
Japanese (ja)
Other versions
JPH0622246B2 (en
Inventor
Setsuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62183921A priority Critical patent/JPH0622246B2/en
Publication of JPS6427271A publication Critical patent/JPS6427271A/en
Publication of JPH0622246B2 publication Critical patent/JPH0622246B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain a self-alignment type thin-film transistor by forming a source region and a drain region through the introduction of an impurity, using a second transparent insulating film shaped through back exposure, employing a gate electrode as a mask. CONSTITUTION:A process in which a first transparent insulating film 16 and an amorphous semiconductor film 13 are formed in succession so as to coat a gate electrode 11 on an insulating substrate 10, a process, in which the amorphous semiconductor film 13 is patterned insularly, and a process in which a second transparent insulating film 14 is patterned to a shape corresponding to the gate electrode 11 are provided. A process, in which an impurity is introduced selectively to the amorphous semiconductor film 13, using the second transparent insulating film 14 as at least one part of a mask and a source region 17a and a drain region 17b are formed, and a process in which a metallic film 19 brought into ohmic-contact with the source region and the drain region is applied and patterned to a specified shape and a source electrode 21a and a drain electrode 21b are formed are included. Accordingly, a lift-off process is not contained in the processes, thus shaping a self-alignment type thin-film transistor with high yield.
JP62183921A 1987-07-22 1987-07-22 Method of manufacturing thin film transistor Expired - Lifetime JPH0622246B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183921A JPH0622246B2 (en) 1987-07-22 1987-07-22 Method of manufacturing thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183921A JPH0622246B2 (en) 1987-07-22 1987-07-22 Method of manufacturing thin film transistor

Publications (2)

Publication Number Publication Date
JPS6427271A true JPS6427271A (en) 1989-01-30
JPH0622246B2 JPH0622246B2 (en) 1994-03-23

Family

ID=16144141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183921A Expired - Lifetime JPH0622246B2 (en) 1987-07-22 1987-07-22 Method of manufacturing thin film transistor

Country Status (1)

Country Link
JP (1) JPH0622246B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656511A (en) * 1989-09-04 1997-08-12 Canon Kabushiki Kaisha Manufacturing method for semiconductor device
KR100292974B1 (en) * 1990-11-15 2001-09-17 핫토리 쥰이치 Semiconductor device and manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS59210670A (en) * 1983-05-16 1984-11-29 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6110279A (en) * 1984-06-14 1986-01-17 トムソン‐セ‐エスエフ Method of producing thin film field effect transistor and transistor obtained by same method
JPS61248564A (en) * 1985-04-26 1986-11-05 Nec Corp Thin film transistor and manufacture thereof
JPS62205664A (en) * 1986-03-06 1987-09-10 Matsushita Electric Ind Co Ltd Manufacture of thin film transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS59210670A (en) * 1983-05-16 1984-11-29 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6110279A (en) * 1984-06-14 1986-01-17 トムソン‐セ‐エスエフ Method of producing thin film field effect transistor and transistor obtained by same method
JPS61248564A (en) * 1985-04-26 1986-11-05 Nec Corp Thin film transistor and manufacture thereof
JPS62205664A (en) * 1986-03-06 1987-09-10 Matsushita Electric Ind Co Ltd Manufacture of thin film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656511A (en) * 1989-09-04 1997-08-12 Canon Kabushiki Kaisha Manufacturing method for semiconductor device
KR100292974B1 (en) * 1990-11-15 2001-09-17 핫토리 쥰이치 Semiconductor device and manufacturing method

Also Published As

Publication number Publication date
JPH0622246B2 (en) 1994-03-23

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