JPS62205664A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS62205664A
JPS62205664A JP4888686A JP4888686A JPS62205664A JP S62205664 A JPS62205664 A JP S62205664A JP 4888686 A JP4888686 A JP 4888686A JP 4888686 A JP4888686 A JP 4888686A JP S62205664 A JPS62205664 A JP S62205664A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
source
insulating film
drain
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4888686A
Inventor
Takashi Hirao
Michihiro Miyauchi
Kentaro Setsune
Tetsuhisa Yoshida
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To apply a method to both an a-Si and polycrystalline Si FETs, by doping desired elements in regions, which are to become a source and a drain in a self-aligning mode. CONSTITUTION:On a transparent substrate 11 made of quartz, soda glass and the like, a gate electrode 12 is formed with Cr, MoSi2, TiSi2 and the like or a composite layer thereof. A gate insulating film 13 such as SiO2 and Si3N4, a polycrystalline Si film 14 and SiO2 insulating film 15 are formed. Photoresist 16 is applied. The back surface is exposed to light 17, and the photoresist 16 and the insulating film 15 at source and drain regions are removed. Opening parts 18 and 19 are formed. The photoresist 16 on the gate electrode 12 is removed. With the insulating film 15 as a mask, group III or V element impurities 20 are introduced in the source and drain regions in the polycrystalline Si layer 14. Heat treatment is performed, and the source region 21 and the drain region 22 are formed. A source electrode 23 and a drain electrode 24 are formed.
JP4888686A 1986-03-06 1986-03-06 Manufacture of thin film transistor Pending JPS62205664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4888686A JPS62205664A (en) 1986-03-06 1986-03-06 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4888686A JPS62205664A (en) 1986-03-06 1986-03-06 Manufacture of thin film transistor

Publications (1)

Publication Number Publication Date
JPS62205664A true true JPS62205664A (en) 1987-09-10

Family

ID=12815759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4888686A Pending JPS62205664A (en) 1986-03-06 1986-03-06 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS62205664A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63158875A (en) * 1986-12-22 1988-07-01 Nec Corp Manufacture of thin-film transistor
JPS63168052A (en) * 1986-12-29 1988-07-12 Nec Corp Thin film transistor and manufacture thereof
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor
JPH01115162A (en) * 1987-10-29 1989-05-08 Matsushita Electric Ind Co Ltd Thin film transistor and manufacture thereof
JPH01235383A (en) * 1988-03-16 1989-09-20 Matsushita Electric Ind Co Ltd Manufacture of thin-film field-effect transistor
JPH01235384A (en) * 1988-03-16 1989-09-20 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02177323A (en) * 1988-12-27 1990-07-10 Matsushita Electric Ind Co Ltd Impurity introduction
JPH04273445A (en) * 1991-02-28 1992-09-29 G T C:Kk Thin film semiconductor device and its production
EP0902481A2 (en) * 1997-09-10 1999-03-17 Xerox Corporation Thin film transistor with reduced parasitic capacitance
US5926701A (en) * 1994-12-21 1999-07-20 Sony Electronics, Inc. Thin film transistor fabrication technique
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2016520205A (en) * 2013-04-28 2016-07-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Array substrate and fabrication method thereof, a display device comprising the array substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS6114762A (en) * 1984-06-29 1986-01-22 Toshiba Corp Manufacture of thin film field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168278A (en) * 1982-03-30 1983-10-04 Toshiba Corp Manufacture of thin film transistor
JPS6114762A (en) * 1984-06-29 1986-01-22 Toshiba Corp Manufacture of thin film field effect transistor

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63158875A (en) * 1986-12-22 1988-07-01 Nec Corp Manufacture of thin-film transistor
JPS63168052A (en) * 1986-12-29 1988-07-12 Nec Corp Thin film transistor and manufacture thereof
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor
JPH01115162A (en) * 1987-10-29 1989-05-08 Matsushita Electric Ind Co Ltd Thin film transistor and manufacture thereof
JPH01235383A (en) * 1988-03-16 1989-09-20 Matsushita Electric Ind Co Ltd Manufacture of thin-film field-effect transistor
JPH01235384A (en) * 1988-03-16 1989-09-20 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02177323A (en) * 1988-12-27 1990-07-10 Matsushita Electric Ind Co Ltd Impurity introduction
JPH04273445A (en) * 1991-02-28 1992-09-29 G T C:Kk Thin film semiconductor device and its production
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US5926701A (en) * 1994-12-21 1999-07-20 Sony Electronics, Inc. Thin film transistor fabrication technique
EP0902481A3 (en) * 1997-09-10 2000-06-21 Xerox Corporation Thin film transistor with reduced parasitic capacitance
EP0902481A2 (en) * 1997-09-10 1999-03-17 Xerox Corporation Thin film transistor with reduced parasitic capacitance
JP2016520205A (en) * 2013-04-28 2016-07-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Array substrate and fabrication method thereof, a display device comprising the array substrate

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