JPS59210670A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS59210670A
JPS59210670A JP8412883A JP8412883A JPS59210670A JP S59210670 A JPS59210670 A JP S59210670A JP 8412883 A JP8412883 A JP 8412883A JP 8412883 A JP8412883 A JP 8412883A JP S59210670 A JPS59210670 A JP S59210670A
Authority
JP
Japan
Prior art keywords
film
formed
mask
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8412883A
Inventor
Shinjirou Shikura
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP8412883A priority Critical patent/JPS59210670A/en
Publication of JPS59210670A publication Critical patent/JPS59210670A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To silicify gate-source-drain regions in a self-alignment manner by coating the upper section of polycrystalline Si with a metal and silicifying the side wall of a gate electrode through heat treatment. CONSTITUTION:A gate oxide film 2 is formed on the surface of a P type Si substrate 1 after an element is isolated by a thick oxide film 3, and a polycrystalline Si film 4 is deposited on the film 2. A Si oxide film 5 is deposited on the film 4, and a resist mask 6 is formed on the oxide film 5. The film 5 is etched while using the mask 6 as a mask. The film 4 is oxidized to shape an oxidized polycrystalline Si film 4a. The film 4 is left as it is within a range of an area slightly narrower than that of the film 5 at that time. A gate electrode is formed to a shape that the film 4a adheres on the side wall of the film 4 through plasma etching while using the film 5 as a mask. When the whole surface is coated with a Ti film 7 as a metallic film and the whole is thermally treated, the surface of the substrate 1, the film 4 and the upper section of the electrode react with Ti, and TiSi2 is formed to source-drain sections and the gate electrode section in a self-alignment manner.
JP8412883A 1983-05-16 1983-05-16 Manufacture of semiconductor device Pending JPS59210670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8412883A JPS59210670A (en) 1983-05-16 1983-05-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8412883A JPS59210670A (en) 1983-05-16 1983-05-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59210670A true JPS59210670A (en) 1984-11-29

Family

ID=13821868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8412883A Pending JPS59210670A (en) 1983-05-16 1983-05-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59210670A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor

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