JPS5756964A - Manufacture of mis type semiconductor device - Google Patents
Manufacture of mis type semiconductor deviceInfo
- Publication number
- JPS5756964A JPS5756964A JP56108307A JP10830781A JPS5756964A JP S5756964 A JPS5756964 A JP S5756964A JP 56108307 A JP56108307 A JP 56108307A JP 10830781 A JP10830781 A JP 10830781A JP S5756964 A JPS5756964 A JP S5756964A
- Authority
- JP
- Japan
- Prior art keywords
- writing
- diffused layer
- fet
- film
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Abstract
PURPOSE:To perform the writing of an Si gate type MISROM at the initial stage in the steps of manufacturing FETs disposed in matrix by forming or not forming a hole at the field film of a drain diffused layer forming region. CONSTITUTION:The gate electrode 4a of a cell FET extends as an input wire 4b, and a source diffused layer is commonly connected to a ground wire. The drain diffused layer is connected to the aluminum output wire on the upper layer of the input wire 4a to form a cell in a matrix shape. In the respective FETs, holes are opened at the field oxidized film 2 formed thickly on the substrate 1, and are formed of Si gate process. The pattern opened at the field film 2 is altered according to the writing or not writing the FET. For example, the field film 2 is retained in the drain diffused layer forming region 1a of the FET not written, and is not connected to the output line. In this manner, the writing of the ROM can be simply performed in the manufacturing steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56108307A JPS584461B2 (en) | 1981-07-13 | 1981-07-13 | Manufacturing method of MIS type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56108307A JPS584461B2 (en) | 1981-07-13 | 1981-07-13 | Manufacturing method of MIS type semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2616673A Division JPS5738034B2 (en) | 1973-03-07 | 1973-03-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5756964A true JPS5756964A (en) | 1982-04-05 |
| JPS584461B2 JPS584461B2 (en) | 1983-01-26 |
Family
ID=14481379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56108307A Expired JPS584461B2 (en) | 1981-07-13 | 1981-07-13 | Manufacturing method of MIS type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS584461B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108008A (en) * | 1994-09-22 | 2000-08-22 | Canon Kabushiki Kaisha | Color image mapping within output device reproduction range |
-
1981
- 1981-07-13 JP JP56108307A patent/JPS584461B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108008A (en) * | 1994-09-22 | 2000-08-22 | Canon Kabushiki Kaisha | Color image mapping within output device reproduction range |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS584461B2 (en) | 1983-01-26 |
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