JPS6464351A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6464351A JPS6464351A JP62222502A JP22250287A JPS6464351A JP S6464351 A JPS6464351 A JP S6464351A JP 62222502 A JP62222502 A JP 62222502A JP 22250287 A JP22250287 A JP 22250287A JP S6464351 A JPS6464351 A JP S6464351A
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- source
- drain
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce one mask process by a method wherein a patterning operation of both gate electrodes is not executed at a time but is divided into two processes in such a way that the operation corresponds to a formation process of a source-drain region of both transistors. CONSTITUTION:During a first mask process, while a polycrystalline silicon layer 4 in a region to be used as a source-drain channel of a first transistor T1 and a region to be used as a channel and a part to be used as a prescribed circuit wiring region 4a of a second transistor T2 is left, the polycrystalline silicon layer on a region to be used as a source-drain of the second transistor T2 is removed; ions of arsenic are implanted selectively into the source-drain region of the second transistor T2 by making use of the polycrystalline silicon layer 4 as a mask; an n<+> source-drain 6 is formed. During a second mask process, while a resist layer on a whole part of the second transistor region T2 and a region to be used as a channel and the prescribed circuit wiring region 4a of the first transistor T1 is left, the resist in the region to be used as the source-drain of the first transistor is removed. By this setup, a CMOSIC is realized by applying two mask processes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62222502A JPS6464351A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62222502A JPS6464351A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464351A true JPS6464351A (en) | 1989-03-10 |
Family
ID=16783432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62222502A Pending JPS6464351A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464351A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02266532A (en) * | 1989-04-06 | 1990-10-31 | Matsushita Electron Corp | Manufacture of semiconductor device |
US5272367A (en) * | 1988-05-02 | 1993-12-21 | Micron Technology, Inc. | Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams) |
-
1987
- 1987-09-04 JP JP62222502A patent/JPS6464351A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272367A (en) * | 1988-05-02 | 1993-12-21 | Micron Technology, Inc. | Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams) |
JPH02266532A (en) * | 1989-04-06 | 1990-10-31 | Matsushita Electron Corp | Manufacture of semiconductor device |
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