JPS5793542A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5793542A
JPS5793542A JP55169553A JP16955380A JPS5793542A JP S5793542 A JPS5793542 A JP S5793542A JP 55169553 A JP55169553 A JP 55169553A JP 16955380 A JP16955380 A JP 16955380A JP S5793542 A JPS5793542 A JP S5793542A
Authority
JP
Japan
Prior art keywords
misfet
polysilicon
wafer
measuring
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55169553A
Other languages
Japanese (ja)
Inventor
Tomiji Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55169553A priority Critical patent/JPS5793542A/en
Priority to DE19813146777 priority patent/DE3146777A1/en
Priority to GB8135810A priority patent/GB2090057A/en
Priority to FR8122382A priority patent/FR2496989A1/en
Priority to IT25408/81A priority patent/IT1169283B/en
Publication of JPS5793542A publication Critical patent/JPS5793542A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To enable the characteristic test of a semiconductor integrated circuit device in an early stage by forming the source and drain electrodes of a measuring MISFET of polysilicon at the step of patterning a polysilicon gate when forming a plurality of MISFETs on a wafer. CONSTITUTION:A plurality of MISFETs and measuring MISFET are formed at the respective regions with ordinary steps on a wafer 1. That is, an LOCOS oxidized film 11 is formed on the wafer 1, a gate insulating film 12 is then formed, an impurity is then introduced, and source and drain regions 39, 40 are formed. Subsequently, polysilicon is used to form a gate electrode 27. In this case, source and drain electrodes 25, 26 are temporarily formed simultaneously upon formation of the gate electrode 27 using polysilicon at the part becoming the measuring MISFET. At this time the characteristic test of the MISFET is carried out to discriminate the propriety of the part at the early stage before completing the element, thereby improving the yield.
JP55169553A 1980-12-03 1980-12-03 Semiconductor integrated circuit device Pending JPS5793542A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55169553A JPS5793542A (en) 1980-12-03 1980-12-03 Semiconductor integrated circuit device
DE19813146777 DE3146777A1 (en) 1980-12-03 1981-11-25 INTEGRATED SEMICONDUCTOR CIRCUIT
GB8135810A GB2090057A (en) 1980-12-03 1981-11-27 Test structures for semiconductor integrated circuits
FR8122382A FR2496989A1 (en) 1980-12-03 1981-11-30 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MULTIPLE MISFET TRANSISTORS FORMING A LOGIC CIRCUIT, AND METHOD FOR MANUFACTURING SUCH A DEVICE
IT25408/81A IT1169283B (en) 1980-12-03 1981-12-02 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169553A JPS5793542A (en) 1980-12-03 1980-12-03 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5793542A true JPS5793542A (en) 1982-06-10

Family

ID=15888596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169553A Pending JPS5793542A (en) 1980-12-03 1980-12-03 Semiconductor integrated circuit device

Country Status (5)

Country Link
JP (1) JPS5793542A (en)
DE (1) DE3146777A1 (en)
FR (1) FR2496989A1 (en)
GB (1) GB2090057A (en)
IT (1) IT1169283B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148929A (en) * 1984-08-16 1986-03-10 Matsushita Electronics Corp Manufacture of insulating gate type semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567430A (en) * 1981-09-08 1986-01-28 Recognition Equipment Incorporated Semiconductor device for automation of integrated photoarray characterization
US4440799A (en) * 1982-10-22 1984-04-03 Rca Corporation Monitor for impurity levels in aluminum deposition
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
EP0211402B1 (en) * 1985-08-02 1991-05-08 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
US5457399A (en) * 1992-12-14 1995-10-10 Hughes Aircraft Company Microwave monolithic integrated circuit fabrication, test method and test probes
EP0685881A1 (en) * 1994-05-31 1995-12-06 AT&T Corp. Linewidth control apparatus and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697318A (en) * 1967-05-23 1972-10-10 Ibm Monolithic integrated structure including fabrication thereof
JPS4831516B1 (en) * 1969-10-17 1973-09-29
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
FR2280203A1 (en) * 1974-07-26 1976-02-20 Thomson Csf FIELD-EFFECT TRANSISTOR THRESHOLD TENSION ADJUSTMENT METHOD
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
DE2947311C2 (en) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrated semiconductor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148929A (en) * 1984-08-16 1986-03-10 Matsushita Electronics Corp Manufacture of insulating gate type semiconductor device

Also Published As

Publication number Publication date
IT8125408A0 (en) 1981-12-02
DE3146777A1 (en) 1982-09-16
IT1169283B (en) 1987-05-27
FR2496989A1 (en) 1982-06-25
GB2090057A (en) 1982-06-30

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