IT8125408A0 - SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE. - Google Patents

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE.

Info

Publication number
IT8125408A0
IT8125408A0 IT8125408A IT2540881A IT8125408A0 IT 8125408 A0 IT8125408 A0 IT 8125408A0 IT 8125408 A IT8125408 A IT 8125408A IT 2540881 A IT2540881 A IT 2540881A IT 8125408 A0 IT8125408 A0 IT 8125408A0
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
IT8125408A
Other languages
Italian (it)
Other versions
IT1169283B (en
Inventor
Tomiji Maeda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8125408A0 publication Critical patent/IT8125408A0/en
Application granted granted Critical
Publication of IT1169283B publication Critical patent/IT1169283B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IT25408/81A 1980-12-03 1981-12-02 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE IT1169283B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169553A JPS5793542A (en) 1980-12-03 1980-12-03 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
IT8125408A0 true IT8125408A0 (en) 1981-12-02
IT1169283B IT1169283B (en) 1987-05-27

Family

ID=15888596

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25408/81A IT1169283B (en) 1980-12-03 1981-12-02 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Country Status (5)

Country Link
JP (1) JPS5793542A (en)
DE (1) DE3146777A1 (en)
FR (1) FR2496989A1 (en)
GB (1) GB2090057A (en)
IT (1) IT1169283B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567430A (en) * 1981-09-08 1986-01-28 Recognition Equipment Incorporated Semiconductor device for automation of integrated photoarray characterization
US4440799A (en) * 1982-10-22 1984-04-03 Rca Corporation Monitor for impurity levels in aluminum deposition
JPS6148929A (en) * 1984-08-16 1986-03-10 Matsushita Electronics Corp Manufacture of insulating gate type semiconductor device
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
EP0211402B1 (en) * 1985-08-02 1991-05-08 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
US5457399A (en) * 1992-12-14 1995-10-10 Hughes Aircraft Company Microwave monolithic integrated circuit fabrication, test method and test probes
EP0685881A1 (en) * 1994-05-31 1995-12-06 AT&T Corp. Linewidth control apparatus and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697318A (en) * 1967-05-23 1972-10-10 Ibm Monolithic integrated structure including fabrication thereof
JPS4831516B1 (en) * 1969-10-17 1973-09-29
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
FR2280203A1 (en) * 1974-07-26 1976-02-20 Thomson Csf FIELD-EFFECT TRANSISTOR THRESHOLD TENSION ADJUSTMENT METHOD
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
DE2947311C2 (en) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrated semiconductor circuit

Also Published As

Publication number Publication date
DE3146777A1 (en) 1982-09-16
IT1169283B (en) 1987-05-27
GB2090057A (en) 1982-06-30
FR2496989A1 (en) 1982-06-25
JPS5793542A (en) 1982-06-10

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