IT8125408A0 - SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE. - Google Patents
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE.Info
- Publication number
- IT8125408A0 IT8125408A0 IT8125408A IT2540881A IT8125408A0 IT 8125408 A0 IT8125408 A0 IT 8125408A0 IT 8125408 A IT8125408 A IT 8125408A IT 2540881 A IT2540881 A IT 2540881A IT 8125408 A0 IT8125408 A0 IT 8125408A0
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/316—Testing of analog circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55169553A JPS5793542A (en) | 1980-12-03 | 1980-12-03 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8125408A0 true IT8125408A0 (en) | 1981-12-02 |
| IT1169283B IT1169283B (en) | 1987-05-27 |
Family
ID=15888596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25408/81A IT1169283B (en) | 1980-12-03 | 1981-12-02 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5793542A (en) |
| DE (1) | DE3146777A1 (en) |
| FR (1) | FR2496989A1 (en) |
| GB (1) | GB2090057A (en) |
| IT (1) | IT1169283B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567430A (en) * | 1981-09-08 | 1986-01-28 | Recognition Equipment Incorporated | Semiconductor device for automation of integrated photoarray characterization |
| US4440799A (en) * | 1982-10-22 | 1984-04-03 | Rca Corporation | Monitor for impurity levels in aluminum deposition |
| JPS6148929A (en) * | 1984-08-16 | 1986-03-10 | Matsushita Electronics Corp | Manufacture of insulating gate type semiconductor device |
| US4646424A (en) * | 1985-08-02 | 1987-03-03 | General Electric Company | Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
| US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
| US4855806A (en) * | 1985-08-02 | 1989-08-08 | General Electric Company | Thin film transistor with aluminum contacts and nonaluminum metallization |
| EP0211402B1 (en) * | 1985-08-02 | 1991-05-08 | General Electric Company | Process and structure for thin film transistor matrix addressed liquid crystal displays |
| US5457399A (en) * | 1992-12-14 | 1995-10-10 | Hughes Aircraft Company | Microwave monolithic integrated circuit fabrication, test method and test probes |
| EP0685881A1 (en) * | 1994-05-31 | 1995-12-06 | AT&T Corp. | Linewidth control apparatus and method |
| USD584951S1 (en) * | 2006-05-08 | 2009-01-20 | Plastipak Packaging, Inc. | Plastic container |
| USD579337S1 (en) * | 2008-06-11 | 2008-10-28 | Cott Beverages Inc. | Bottle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3697318A (en) * | 1967-05-23 | 1972-10-10 | Ibm | Monolithic integrated structure including fabrication thereof |
| JPS4831516B1 (en) * | 1969-10-17 | 1973-09-29 | ||
| US3774088A (en) * | 1972-12-29 | 1973-11-20 | Ibm | An integrated circuit test transistor structure and method of fabricating the same |
| FR2280203A1 (en) * | 1974-07-26 | 1976-02-20 | Thomson Csf | FIELD-EFFECT TRANSISTOR THRESHOLD TENSION ADJUSTMENT METHOD |
| US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
| CA1074009A (en) * | 1975-03-03 | 1980-03-18 | Robert W. Brodersen | Charge coupled device memory |
| US4197632A (en) * | 1975-12-05 | 1980-04-15 | Nippon Electric Co., Ltd. | Semiconductor device |
| EP0003413A3 (en) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Improvements relating to semiconductor memories |
| JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
| DE2947311C2 (en) * | 1978-11-24 | 1982-04-01 | Hitachi, Ltd., Tokyo | Integrated semiconductor circuit |
-
1980
- 1980-12-03 JP JP55169553A patent/JPS5793542A/en active Pending
-
1981
- 1981-11-25 DE DE19813146777 patent/DE3146777A1/en not_active Withdrawn
- 1981-11-27 GB GB8135810A patent/GB2090057A/en not_active Withdrawn
- 1981-11-30 FR FR8122382A patent/FR2496989A1/en active Pending
- 1981-12-02 IT IT25408/81A patent/IT1169283B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| GB2090057A (en) | 1982-06-30 |
| FR2496989A1 (en) | 1982-06-25 |
| IT1169283B (en) | 1987-05-27 |
| JPS5793542A (en) | 1982-06-10 |
| DE3146777A1 (en) | 1982-09-16 |
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