JPS5638841A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5638841A JPS5638841A JP11443579A JP11443579A JPS5638841A JP S5638841 A JPS5638841 A JP S5638841A JP 11443579 A JP11443579 A JP 11443579A JP 11443579 A JP11443579 A JP 11443579A JP S5638841 A JPS5638841 A JP S5638841A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- window
- nitrided
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To conform a highly integrated circuit by shortening the distance between the wiring of two layer wiring structure and the window without making it short circuit by a method wherein the window for leading out electrode on a diffused layer is formed by selfalignment using a nitrided silicon film. CONSTITUTION:After an N type diffused layer 1 is formed on a surface of a P type silicon semiconductor substrate 2, the nitrided silicon film 11 having oxidation proof is selectively formed on the surface corresponding to the leading out electrode portion on the diffused layer 1. Next thereto, an oxidated silicon film 12 is formed on the semiconductor surface other than the nitrided film 11, a gate oxidation film and a window 13 are formed thereupon. Then, a polcrystalline layer 4 that an impurity has doped is selectively formed to form the first wiring layer, the surface thereof is heat oxidized to form the oxidized silicon layer 14. Thereafter, the nitrided silicon film 11 is removed to make the electrode leading out window 6 and the impurity doped polcrystalline silicon layer 7 is formed as the second wiring layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11443579A JPS5638841A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11443579A JPS5638841A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5638841A true JPS5638841A (en) | 1981-04-14 |
Family
ID=14637646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11443579A Pending JPS5638841A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638841A (en) |
-
1979
- 1979-09-06 JP JP11443579A patent/JPS5638841A/en active Pending
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