JPS5784164A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5784164A
JPS5784164A JP55160230A JP16023080A JPS5784164A JP S5784164 A JPS5784164 A JP S5784164A JP 55160230 A JP55160230 A JP 55160230A JP 16023080 A JP16023080 A JP 16023080A JP S5784164 A JPS5784164 A JP S5784164A
Authority
JP
Japan
Prior art keywords
mask
channel
gate
film
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55160230A
Other languages
Japanese (ja)
Other versions
JPH0113230B2 (en
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55160230A priority Critical patent/JPS5784164A/en
Publication of JPS5784164A publication Critical patent/JPS5784164A/en
Publication of JPH0113230B2 publication Critical patent/JPH0113230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate

Abstract

PURPOSE:To simplify the process and to eliminate the deviation of mask alignment by reducing a PEP process by one time in manufacture of a composite IC such as CMOS-SAMOS. CONSTITUTION:Three layers of an oxide film 9, a polycrystalline Si film 10 and an oxide film 11 are obtained by providing a resist mask on a gate scheduled region of an SAMOS and by selectively etching it. Then a mask for forming a gate of an N channel of a CMOS and a mask for covering a P channel region are formed, and a polycrystalline Si film 8 is etched. And then As is subjected to ion injection to form source-drain regions 16-19, and the N channel of a CMOS2 and an SAMOS3 are obtained. Also about a P channel MOS, a resist 31 for formin a gate and an N-MOS coated mask 20 are formed, and with etching a gate electrode is obtained. Further, the mask is kept as it is, and within an N well 5 boron is subjected to ion injection, thereby allowing a source-drain region to be formed.
JP55160230A 1980-11-14 1980-11-14 Manufacture of semiconductor device Granted JPS5784164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160230A JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160230A JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5784164A true JPS5784164A (en) 1982-05-26
JPH0113230B2 JPH0113230B2 (en) 1989-03-03

Family

ID=15710511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160230A Granted JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784164A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974677A (en) * 1982-10-22 1984-04-27 Ricoh Co Ltd Semiconductor device and manufacture thereof
JPS60213051A (en) * 1984-04-09 1985-10-25 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS60226182A (en) * 1984-04-25 1985-11-11 Nec Corp Manufacture of field effect semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129551A (en) * 1984-07-20 1986-02-10 Canon Inc Manufacture of liquid injection recording head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129551A (en) * 1984-07-20 1986-02-10 Canon Inc Manufacture of liquid injection recording head

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974677A (en) * 1982-10-22 1984-04-27 Ricoh Co Ltd Semiconductor device and manufacture thereof
JPS60213051A (en) * 1984-04-09 1985-10-25 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS60226182A (en) * 1984-04-25 1985-11-11 Nec Corp Manufacture of field effect semiconductor device

Also Published As

Publication number Publication date
JPH0113230B2 (en) 1989-03-03

Similar Documents

Publication Publication Date Title
JPS5626467A (en) Semiconductor device and the manufacturing process
JPS5736842A (en) Semiconductor integrated circuit device
JPS5784164A (en) Manufacture of semiconductor device
JPS57192063A (en) Manufacture of semiconductor device
JPS6442853A (en) Manufacturing process of cmos device
JPS6484659A (en) Manufacture of semiconductor device
JPS57107067A (en) Manufacture of semiconductor device
JPS57113263A (en) Semiconductor device and its manufacture
JPS56140655A (en) Manufacture of semiconductor device
JPS5736856A (en) Manufacture of complementary type insulated gate field effect semiconductor device
JPS5691461A (en) Manufacturing of complementary mos integrated circuit
JPS577153A (en) Preparation of semiconductor device
JPS54127289A (en) Semiconductor integrated circuit device and its manufacture
JPS577154A (en) Preparation of semiconductor device
JPS54122982A (en) Manufacture for complementary mos integrated circuit device
JPS56115570A (en) Manufacture of semiconductor device
JPS5635467A (en) Manufacture of complementary mos semiconductor device
JPS561572A (en) Manufacture of semiconductor device
JPS54114982A (en) Manufacture for complementary isolation gate field effect semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5599763A (en) Semiconductor device
JPS55110076A (en) Manufacture of semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS6464351A (en) Manufacture of semiconductor device
JPS55153373A (en) Production of complementry type semiconductor device