JPS5518076A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS5518076A JPS5518076A JP9175178A JP9175178A JPS5518076A JP S5518076 A JPS5518076 A JP S5518076A JP 9175178 A JP9175178 A JP 9175178A JP 9175178 A JP9175178 A JP 9175178A JP S5518076 A JPS5518076 A JP S5518076A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lifting
- region
- making
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make a gate electrode without lifting-off and improve the yield, by growing an N-type layer on a semi-insulating GaAs substrate, providing a source and a drain electrodes on the N-type layer and making the gate electrode by plating on the layer between the former electrodes.
CONSTITUTION: The N+-layer 2 is grown on the semi-insulating GaAs substrate 1. The source electrode 3, the drain electrode 4 and a peripheral frame 6 for facilitating the lifting-off are made on the layer 2 by the lifting-off and photoengraving. At that time, a layer part 2 for a gate making region 5 is left under the electrodes 3, 4. The thickness of the other parts of the layer 2 is reduced by etching so that the layer parts are left as electroconductive layers 9. The non-gate part of the region 5 is coated with a resist film 7 and the other part of the region is etched, thereby making a recess 10. A metal film 11 for the gate electrode is coated in the recess 10 by electrolytic plating through the electroconductive layers 9. These layers 9 are then removed. A plurality of GaAs field-effect transistors are thus manufactured on the substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175178A JPS5518076A (en) | 1978-07-26 | 1978-07-26 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175178A JPS5518076A (en) | 1978-07-26 | 1978-07-26 | Manufacture of field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5518076A true JPS5518076A (en) | 1980-02-07 |
Family
ID=14035232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9175178A Pending JPS5518076A (en) | 1978-07-26 | 1978-07-26 | Manufacture of field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518076A (en) |
-
1978
- 1978-07-26 JP JP9175178A patent/JPS5518076A/en active Pending
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