JPS5567171A - Preparation of space wiring type field-effect transistor - Google Patents

Preparation of space wiring type field-effect transistor

Info

Publication number
JPS5567171A
JPS5567171A JP14031678A JP14031678A JPS5567171A JP S5567171 A JPS5567171 A JP S5567171A JP 14031678 A JP14031678 A JP 14031678A JP 14031678 A JP14031678 A JP 14031678A JP S5567171 A JPS5567171 A JP S5567171A
Authority
JP
Japan
Prior art keywords
metallic layer
electrodes
wiring
layer
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14031678A
Other languages
Japanese (ja)
Inventor
Manabu Watase
Michihiro Kobiki
Yasuro Mitsui
Mutsuyuki Otsubo
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14031678A priority Critical patent/JPS5567171A/en
Publication of JPS5567171A publication Critical patent/JPS5567171A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To decrease parasitic inductance without lowering yield, by performing wiring, which composes each unit electrode of a unit FET in parallel, by a metallic layer formed by means of an electrolytic plating method.
CONSTITUTION: The electrodes of sources 1, gates 2 and drains 3 are mounted onto a surface of an N epitaxial layer 9 on a semi-insulating substrate 8, one portion of the source electrodes 1 is removed, the whole is coated with a photosensitive resin film 10A and a foundation metallic layer 11A for electrolytic plating is evaporated. A photosensitive resin pattern 12 is made up on the metallic layer 11A except the electrodes 1, and a thick plating metallic layer 13 is manufactured by electrolytically plating only the upper portions of the electrodes 1 selectively. When removing the resin pattern 12, the metallic layer 11A and the resin layer 10A, a space wiring type FET that the source electrodes are mutually connected in parallel by means of the metallic layer 13 is obtained, the parasitic inductance of wiring can sharply be diminished, assembly is simple because leads are not used and yield does not lower.
COPYRIGHT: (C)1980,JPO&Japio
JP14031678A 1978-11-13 1978-11-13 Preparation of space wiring type field-effect transistor Pending JPS5567171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14031678A JPS5567171A (en) 1978-11-13 1978-11-13 Preparation of space wiring type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14031678A JPS5567171A (en) 1978-11-13 1978-11-13 Preparation of space wiring type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5567171A true JPS5567171A (en) 1980-05-21

Family

ID=15265962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14031678A Pending JPS5567171A (en) 1978-11-13 1978-11-13 Preparation of space wiring type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5567171A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151370A (en) * 1979-05-16 1980-11-25 Nec Corp Field effect transistor and fabricating method of the same
JPS5892277A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS6450470A (en) * 1987-08-20 1989-02-27 Nec Corp Field-effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151370A (en) * 1979-05-16 1980-11-25 Nec Corp Field effect transistor and fabricating method of the same
JPS5892277A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS6450470A (en) * 1987-08-20 1989-02-27 Nec Corp Field-effect transistor

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