JPS5627975A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5627975A
JPS5627975A JP10397879A JP10397879A JPS5627975A JP S5627975 A JPS5627975 A JP S5627975A JP 10397879 A JP10397879 A JP 10397879A JP 10397879 A JP10397879 A JP 10397879A JP S5627975 A JPS5627975 A JP S5627975A
Authority
JP
Japan
Prior art keywords
resist mask
type
hetero junction
type layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10397879A
Other languages
Japanese (ja)
Other versions
JPS6114677B2 (en
Inventor
Yasuhiro Ishii
Noriyuki Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10397879A priority Critical patent/JPS5627975A/en
Publication of JPS5627975A publication Critical patent/JPS5627975A/en
Publication of JPS6114677B2 publication Critical patent/JPS6114677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To achieve high performance and planar formation of the compound semiconductor device by forming a hetero junction P<+> type layer by a selective epitaxial process and an N<+> type layer by a selective ion implantation process. CONSTITUTION:An insulating film 12 is coated on the surface of a semi-insulating GaAs substrate 11, a device region forming resist mask 13 is formed thereon, and an N type active layer 14 is formed thereon. Then, an insulating film 15 is formed thereon, a resist mask 16 is further formed thereon, and openings are perforated by etching at the film 15. Thereafter, a resist mask 17 is formed thereon, and N<+> type layers 18 and 19 of source and drain electrode regions are formed thereon by an ion implantation process. Subsequently, a resist mask 20 is formed thereon, and a hetero junction P<+> type layer 21 of a gate electrode region is formed thereon. A resist mask 22 is further formed thereon, and evaporation and lift-off are executed to form ohmic electrode metallic layers 23 and 24. Then, a resist mask 25 is formed thereon, and a hetero junction P<+> type gate electrode 26, source and drain wires 27 and 28 are formed thereon. Finally, the resist mask 25 is removed therefrom.
JP10397879A 1979-08-17 1979-08-17 Manufacture of compound semiconductor device Granted JPS5627975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10397879A JPS5627975A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10397879A JPS5627975A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5627975A true JPS5627975A (en) 1981-03-18
JPS6114677B2 JPS6114677B2 (en) 1986-04-19

Family

ID=14368404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10397879A Granted JPS5627975A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334978A (en) * 1986-07-29 1988-02-15 Agency Of Ind Science & Technol Thin film junction field-effect element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334978A (en) * 1986-07-29 1988-02-15 Agency Of Ind Science & Technol Thin film junction field-effect element

Also Published As

Publication number Publication date
JPS6114677B2 (en) 1986-04-19

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