JPS54588A - Schottky barrier gate type field effect transistor - Google Patents
Schottky barrier gate type field effect transistorInfo
- Publication number
- JPS54588A JPS54588A JP6465277A JP6465277A JPS54588A JP S54588 A JPS54588 A JP S54588A JP 6465277 A JP6465277 A JP 6465277A JP 6465277 A JP6465277 A JP 6465277A JP S54588 A JPS54588 A JP S54588A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- gate type
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To inhibit the drift phenomena of source-drain current and prevent the degradation in noise figure by using an anodic-oxidized film as a protecting film thereby perfectly protecting active region surface.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6465277A JPS54588A (en) | 1977-06-03 | 1977-06-03 | Schottky barrier gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6465277A JPS54588A (en) | 1977-06-03 | 1977-06-03 | Schottky barrier gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54588A true JPS54588A (en) | 1979-01-05 |
Family
ID=13264369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6465277A Pending JPS54588A (en) | 1977-06-03 | 1977-06-03 | Schottky barrier gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54588A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
-
1977
- 1977-06-03 JP JP6465277A patent/JPS54588A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS535581A (en) | Schottky gate type field effect transistor | |
JPS5422781A (en) | Insulator gate protective semiconductor device | |
JPS542679A (en) | Nonvoltile semiconductor memory device | |
JPS5382179A (en) | Field effect transistor | |
JPS53133379A (en) | Junction-type field effect transistor | |
JPS546777A (en) | Field effect type transistor | |
JPS52117586A (en) | Semiconductor device | |
JPS54588A (en) | Schottky barrier gate type field effect transistor | |
JPS5322379A (en) | Junction type field eff ect transistor | |
JPS5381087A (en) | Gallium aresenide field effect transistor | |
JPS5382277A (en) | Schottky gate field effect transistor | |
JPS5415681A (en) | Manufacture of field effect transistor | |
JPS5245280A (en) | Field effect transistor of schottky barrier type | |
JPS5366179A (en) | Semiconductor device | |
JPS5286086A (en) | Field effect transistor | |
JPS5371573A (en) | Field effect transistor of isolating gate type | |
JPS5435684A (en) | Junction type field effect transistor | |
JPS5372578A (en) | Mis-type field effect transistor | |
JPS52127078A (en) | Semiconductor device | |
JPS52100875A (en) | Mos transistor | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS5426668A (en) | Field effect transistor of junction gate type | |
JPS5381086A (en) | Gallium aresenide field effect transistor | |
JPS538079A (en) | Insulated gate type field effect transistor |