JPS5556668A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS5556668A
JPS5556668A JP13021178A JP13021178A JPS5556668A JP S5556668 A JPS5556668 A JP S5556668A JP 13021178 A JP13021178 A JP 13021178A JP 13021178 A JP13021178 A JP 13021178A JP S5556668 A JPS5556668 A JP S5556668A
Authority
JP
Japan
Prior art keywords
drain
source
portions
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13021178A
Other languages
Japanese (ja)
Inventor
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13021178A priority Critical patent/JPS5556668A/en
Publication of JPS5556668A publication Critical patent/JPS5556668A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain stable characteristics in high-voltage operation by providing a gate electrode on a tapered active layer, and source and drain electrodes on both sides of the active layer respectively. CONSTITUTION:On a semi-insulating substrate 10, an n-type GaAs buffer layer 20 and a thin n-type GaAs active layer 30 are epitaxially formed. Electrodes are attached to the desired perypheral portions, and the layer 30 is positively oxidized and formed in a tapered shape. A Schottky gate electrode 60 is evaporated on the tapered surface by Al and the like, and source-and drain-electrode forming portions 40 and 50 with ohmic property are evaporated on both sides of the tapered portion by Au and the like. Source and drain electrodes 90 and 80 are plated on the portions 40 and 50 and protected by SiO2 70. It is recommended that the thickness h between the layer 20 and the gate-electrode connecting plane is about 0.2mum, and the spacing b between the portions 40 and 50 is about DELTAmum. In this constitution, since the current between the source and drain is received by a plane, high electric fields are not concentrated at the end of the drain electrode 80, junction damages are not caused at high-operation voltages, and a stable operation is ensured.
JP13021178A 1978-10-23 1978-10-23 Field-effect transistor Pending JPS5556668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13021178A JPS5556668A (en) 1978-10-23 1978-10-23 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13021178A JPS5556668A (en) 1978-10-23 1978-10-23 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5556668A true JPS5556668A (en) 1980-04-25

Family

ID=15028739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13021178A Pending JPS5556668A (en) 1978-10-23 1978-10-23 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5556668A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278881A (en) * 1985-09-30 1987-04-11 Sharp Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140278A (en) * 1974-04-26 1975-11-10
JPS52109375A (en) * 1976-03-10 1977-09-13 Nec Corp Manufacture of junction gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140278A (en) * 1974-04-26 1975-11-10
JPS52109375A (en) * 1976-03-10 1977-09-13 Nec Corp Manufacture of junction gate type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278881A (en) * 1985-09-30 1987-04-11 Sharp Corp Semiconductor device

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