JPS5556668A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS5556668A JPS5556668A JP13021178A JP13021178A JPS5556668A JP S5556668 A JPS5556668 A JP S5556668A JP 13021178 A JP13021178 A JP 13021178A JP 13021178 A JP13021178 A JP 13021178A JP S5556668 A JPS5556668 A JP S5556668A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- portions
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain stable characteristics in high-voltage operation by providing a gate electrode on a tapered active layer, and source and drain electrodes on both sides of the active layer respectively. CONSTITUTION:On a semi-insulating substrate 10, an n-type GaAs buffer layer 20 and a thin n-type GaAs active layer 30 are epitaxially formed. Electrodes are attached to the desired perypheral portions, and the layer 30 is positively oxidized and formed in a tapered shape. A Schottky gate electrode 60 is evaporated on the tapered surface by Al and the like, and source-and drain-electrode forming portions 40 and 50 with ohmic property are evaporated on both sides of the tapered portion by Au and the like. Source and drain electrodes 90 and 80 are plated on the portions 40 and 50 and protected by SiO2 70. It is recommended that the thickness h between the layer 20 and the gate-electrode connecting plane is about 0.2mum, and the spacing b between the portions 40 and 50 is about DELTAmum. In this constitution, since the current between the source and drain is received by a plane, high electric fields are not concentrated at the end of the drain electrode 80, junction damages are not caused at high-operation voltages, and a stable operation is ensured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13021178A JPS5556668A (en) | 1978-10-23 | 1978-10-23 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13021178A JPS5556668A (en) | 1978-10-23 | 1978-10-23 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5556668A true JPS5556668A (en) | 1980-04-25 |
Family
ID=15028739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13021178A Pending JPS5556668A (en) | 1978-10-23 | 1978-10-23 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5556668A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6278881A (en) * | 1985-09-30 | 1987-04-11 | Sharp Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140278A (en) * | 1974-04-26 | 1975-11-10 | ||
JPS52109375A (en) * | 1976-03-10 | 1977-09-13 | Nec Corp | Manufacture of junction gate type field effect transistor |
-
1978
- 1978-10-23 JP JP13021178A patent/JPS5556668A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140278A (en) * | 1974-04-26 | 1975-11-10 | ||
JPS52109375A (en) * | 1976-03-10 | 1977-09-13 | Nec Corp | Manufacture of junction gate type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6278881A (en) * | 1985-09-30 | 1987-04-11 | Sharp Corp | Semiconductor device |
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