JPS6459871A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS6459871A JPS6459871A JP62216603A JP21660387A JPS6459871A JP S6459871 A JPS6459871 A JP S6459871A JP 62216603 A JP62216603 A JP 62216603A JP 21660387 A JP21660387 A JP 21660387A JP S6459871 A JPS6459871 A JP S6459871A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- film
- effect transistor
- constitution
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a high-performance MESFET in which high mutual conductance is implemented, by using a constitution in which a ceramic superconductive film is laminated on the Schottky gate electrode. CONSTITUTION:An n-type active layer 2 is formed on a surface of a semi- insulating GaAs substrate 1. A Schottky gate electrode comprising a laminated structure of a tungsten nitride film 3 of a high-melting-point metal compound and a YBa2Cu3Ox film 4 of a ceramic superconductive film is formed on the surface of the n-type active layer 2. Layers of n<+> type of source and drain 5 and 6 are formed in a self-alignment manner with this gate electrode and ohmic electrodes 7 and 8 comprising AuGe are formed on the surface thereof. Since gate resistance Rg is almost zero when this field effect transistor is used beneath a critical temperature of the ceramic superconductor, high mutual conductance gm can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62216603A JPS6459871A (en) | 1987-08-31 | 1987-08-31 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62216603A JPS6459871A (en) | 1987-08-31 | 1987-08-31 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459871A true JPS6459871A (en) | 1989-03-07 |
Family
ID=16691010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62216603A Pending JPS6459871A (en) | 1987-08-31 | 1987-08-31 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459871A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013038180A (en) * | 2011-08-05 | 2013-02-21 | Sharp Corp | GaN-BASED COMPOUND SEMICONDUCTOR DEVICE |
-
1987
- 1987-08-31 JP JP62216603A patent/JPS6459871A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013038180A (en) * | 2011-08-05 | 2013-02-21 | Sharp Corp | GaN-BASED COMPOUND SEMICONDUCTOR DEVICE |
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