JPS6459871A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6459871A
JPS6459871A JP62216603A JP21660387A JPS6459871A JP S6459871 A JPS6459871 A JP S6459871A JP 62216603 A JP62216603 A JP 62216603A JP 21660387 A JP21660387 A JP 21660387A JP S6459871 A JPS6459871 A JP S6459871A
Authority
JP
Japan
Prior art keywords
gate electrode
film
effect transistor
constitution
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62216603A
Other languages
Japanese (ja)
Inventor
Nobuyuki Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62216603A priority Critical patent/JPS6459871A/en
Publication of JPS6459871A publication Critical patent/JPS6459871A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a high-performance MESFET in which high mutual conductance is implemented, by using a constitution in which a ceramic superconductive film is laminated on the Schottky gate electrode. CONSTITUTION:An n-type active layer 2 is formed on a surface of a semi- insulating GaAs substrate 1. A Schottky gate electrode comprising a laminated structure of a tungsten nitride film 3 of a high-melting-point metal compound and a YBa2Cu3Ox film 4 of a ceramic superconductive film is formed on the surface of the n-type active layer 2. Layers of n<+> type of source and drain 5 and 6 are formed in a self-alignment manner with this gate electrode and ohmic electrodes 7 and 8 comprising AuGe are formed on the surface thereof. Since gate resistance Rg is almost zero when this field effect transistor is used beneath a critical temperature of the ceramic superconductor, high mutual conductance gm can be obtained.
JP62216603A 1987-08-31 1987-08-31 Field-effect transistor Pending JPS6459871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216603A JPS6459871A (en) 1987-08-31 1987-08-31 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216603A JPS6459871A (en) 1987-08-31 1987-08-31 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6459871A true JPS6459871A (en) 1989-03-07

Family

ID=16691010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216603A Pending JPS6459871A (en) 1987-08-31 1987-08-31 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6459871A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038180A (en) * 2011-08-05 2013-02-21 Sharp Corp GaN-BASED COMPOUND SEMICONDUCTOR DEVICE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038180A (en) * 2011-08-05 2013-02-21 Sharp Corp GaN-BASED COMPOUND SEMICONDUCTOR DEVICE

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