GB1507701A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1507701A
GB1507701A GB1516775A GB1516775A GB1507701A GB 1507701 A GB1507701 A GB 1507701A GB 1516775 A GB1516775 A GB 1516775A GB 1516775 A GB1516775 A GB 1516775A GB 1507701 A GB1507701 A GB 1507701A
Authority
GB
United Kingdom
Prior art keywords
layer
type
doped
substrate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1516775A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1507701A publication Critical patent/GB1507701A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1507701 Field-effect transistors MATSUSHITA ELECTRONICS CORP 14 April 1975 [17 April 1974] 15167/75 Heading H1K A heterojunction gate FET comprises a semiconductor substrate 1, a channel layer 2, preferably epitaxially deposited on the substrate 1, a gate layer 3 forming a pn heterojunction with the layer 2 and preferably epitaxially deposited thereon, and coplanar source and drain electrodes 5, 6. In the preferred embodiment there is a further epitaxial layer 4 on and of the same conductivity type as the layer 3, a two-stage etching process being used to shape first the layer 4 and then the layer 3, which is underetched beneath the layer 4 so that Al source, drain and gate electrodes 5, 6, 7 can be vacuum deposited without the need for a further mask. In the embodiment the substrate 1 is of p-type or semi-insulating Cr-doped GaAs, the layer 2 is of n-type Sn or Te doped Ga1-x AlxAs (0# x #0À1) and the layers 3 and 4 are respectively of p-type Ge or Zn doped Ga1-yAlyAs (0À2 # y #0À8) and Ga1-3Al3As(0# 3 #0À1).
GB1516775A 1974-04-17 1975-04-14 Semiconductor devices Expired GB1507701A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4432474A JPS50138776A (en) 1974-04-17 1974-04-17

Publications (1)

Publication Number Publication Date
GB1507701A true GB1507701A (en) 1978-04-19

Family

ID=12688304

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1516775A Expired GB1507701A (en) 1974-04-17 1975-04-14 Semiconductor devices

Country Status (5)

Country Link
JP (1) JPS50138776A (en)
CA (1) CA1023480A (en)
DE (1) DE2517049C3 (en)
FR (1) FR2268363B1 (en)
GB (1) GB1507701A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
JPS587071B2 (en) * 1976-06-30 1983-02-08 松下電器産業株式会社 Manufacturing method of semiconductor device
JPS588151B2 (en) * 1976-09-30 1983-02-14 松下電器産業株式会社 Manufacturing method of junction field effect transistor
FR2465317A2 (en) * 1979-03-28 1981-03-20 Thomson Csf FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
FR2452791A1 (en) * 1979-03-28 1980-10-24 Thomson Csf FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
JPS63228672A (en) * 1987-03-18 1988-09-22 Fujitsu Ltd Compound semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE2517049B2 (en) 1978-09-14
FR2268363B1 (en) 1978-06-23
FR2268363A1 (en) 1975-11-14
CA1023480A (en) 1977-12-27
DE2517049A1 (en) 1975-10-30
JPS50138776A (en) 1975-11-05
DE2517049C3 (en) 1979-05-10

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19950413