FR2452791A1 - FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate - Google Patents

FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate

Info

Publication number
FR2452791A1
FR2452791A1 FR7907803A FR7907803A FR2452791A1 FR 2452791 A1 FR2452791 A1 FR 2452791A1 FR 7907803 A FR7907803 A FR 7907803A FR 7907803 A FR7907803 A FR 7907803A FR 2452791 A1 FR2452791 A1 FR 2452791A1
Authority
FR
France
Prior art keywords
alxga1
gallium arsenide
xas
gaas
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7907803A
Other languages
French (fr)
Other versions
FR2452791B1 (en
Inventor
Daniel Delagebeaudeuf
Trong Linh Nuyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7907803A priority Critical patent/FR2452791A1/en
Priority to FR7922301A priority patent/FR2465317A2/en
Priority to DE8080400343T priority patent/DE3068161D1/en
Priority to EP80400343A priority patent/EP0017531B1/en
Priority to JP4013280A priority patent/JPS55160473A/en
Publication of FR2452791A1 publication Critical patent/FR2452791A1/en
Priority to US06/353,100 priority patent/US4471366A/en
Application granted granted Critical
Publication of FR2452791B1 publication Critical patent/FR2452791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

FET with high cut-off frequency comprises, supported on a semi-insulating substrate, two access regions (source and drain) and a command region consisting of an active layer and a grid, the interface of which constitutes a junction. Specifically, the junction is a heterojunction between different materials, GaAs for the active layer, AlxGa1-x for the grid, with specific n-type electronic concentrations. (GaAs 1016 e-/cm3, AlxGa1-xAs, 0.2-1.0). The AlxGa1-xAs is 102 x 103 angstroms thick and is covered with a layer of insulating material between the AlxGa1-xAs and the grid contact metallisation layer. The source and drain regions extend into the GaAs active layer as far as the region of electron accomodation region near the heterojunction between the GaAs and the AlxGa1-xAs. For use at cut off frequencies in the GHz range, the transistor is available for frequencies about 30% higher than known MESFET's.
FR7907803A 1979-03-28 1979-03-28 FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate Granted FR2452791A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (en) 1979-03-28 1979-03-28 FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate
FR7922301A FR2465317A2 (en) 1979-03-28 1979-09-06 FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
DE8080400343T DE3068161D1 (en) 1979-03-28 1980-03-14 Field-effect transistor with high cut-off frequency and method of making it
EP80400343A EP0017531B1 (en) 1979-03-28 1980-03-14 Field-effect transistor with high cut-off frequency and method of making it
JP4013280A JPS55160473A (en) 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same
US06/353,100 US4471366A (en) 1979-03-28 1982-03-01 Field effect transistor with high cut-off frequency and process for forming same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (en) 1979-03-28 1979-03-28 FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate

Publications (2)

Publication Number Publication Date
FR2452791A1 true FR2452791A1 (en) 1980-10-24
FR2452791B1 FR2452791B1 (en) 1982-06-04

Family

ID=9223666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7907803A Granted FR2452791A1 (en) 1979-03-28 1979-03-28 FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate

Country Status (1)

Country Link
FR (1) FR2452791A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (en) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (en) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
FR2452791B1 (en) 1982-06-04

Similar Documents

Publication Publication Date Title
US4641161A (en) Heterojunction device
Mishra et al. DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTs
Smith et al. InGaAs pseudomorphic HEMTs for millimeter wave power applications
Fathimulla et al. High-performance InAlAs/InGaAs HEMTs and MESFETs
Hida et al. A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-like FET (DMT)
EP0148595A3 (en) Method of fabricating mesa mosfet using overhang mask and resulting structure
JPS54158880A (en) Compound semiconductor device and its manufacture
FR2452791A1 (en) FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate
JPS57112079A (en) Field-effect semiconductor device
Fathimulla et al. Heterojunction InAlAs/InP MESFETs grown by OMVPE
GB1507701A (en) Semiconductor devices
US5945695A (en) Semiconductor device with InGaP channel layer
JPS57208174A (en) Semiconductor device
Kao et al. Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs
Maezawa et al. Large transconductance n+-Ge gate AlGaAs/GaAs MISFET with thin gate insulator
Kim et al. GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHz
Abid et al. Direct-Schottky-contact InP MESFET
Chough et al. High-performance highly strained Ga/sub 0.23/In/sub 0.77/As/Al/sub 0.48/In/sub 0.52/As MODFET's obtained by selective and shallow etch guide recess techniques
Prost et al. High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
Matloubian et al. Ga/sub 0.47/In/sub 0.53/As-InP HEMTs with novel GaP/sub 0.35/Sb/sub 0.65/Schottky layers grown by MOVPE
Kohn et al. Performance evaluation of GaAs based MODFETs
JPS6451669A (en) Semiconductor element
JPS6027172A (en) Fet device
JPS5632723A (en) Semiconductor device
Albrecht et al. Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer